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    All-polymer bistable resistive memory device based on nanoscale phase-separated PCBM-ferroelectric blends

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    Type
    Article
    Authors
    Khan, Yasser
    Bhansali, Unnat Sampatraj
    Cha, Dong Kyu
    Alshareef, Husam N. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Core Labs
    Electrical Engineering Program
    Functional Nanomaterials and Devices Research Group
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2012-11-21
    Online Publication Date
    2012-11-21
    Print Publication Date
    2013-05-06
    Permanent link to this record
    http://hdl.handle.net/10754/562420
    
    Metadata
    Show full item record
    Abstract
    All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride-trifluoroethylene (P(VDF-TrFE)) and n-type semiconducting [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF-TrFE) matrix. Highly conducting poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/I off ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (Ïμr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Citation
    Khan, M. A., Bhansali, U. S., Cha, D., & Alshareef, H. N. (2012). All-Polymer Bistable Resistive Memory Device Based on Nanoscale Phase-Separated PCBM-Ferroelectric Blends. Advanced Functional Materials, 23(17), 2145–2152. doi:10.1002/adfm.201202724
    Sponsors
    The authors acknowledge the generous financial support from the KAUST baseline fund and Saudi Basic Industries (SABIC) Grant No. 2000000015. The authors also acknowledge Mrs. Supriya Chewle for her help with artistic rendering of the images.
    Publisher
    Wiley
    Journal
    Advanced Functional Materials
    DOI
    10.1002/adfm.201202724
    ae974a485f413a2113503eed53cd6c53
    10.1002/adfm.201202724
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Material Science and Engineering Program; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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