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dc.contributor.authorKaloni, Thaneshwor P.
dc.contributor.authorKahaly, M. Upadhyay
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-08-03T10:00:30Z
dc.date.available2015-08-03T10:00:30Z
dc.date.issued2012-09-01
dc.identifier.issn02955075
dc.identifier.doi10.1209/0295-5075/99/57002
dc.identifier.urihttp://hdl.handle.net/10754/562314
dc.description.abstractRecently huge interest has been focussed on Ge-intercalated graphene. In order to address the effect of Ge on the electronic structure, we study Ge-intercalated free-standing C 6 and C 8 bilayer graphene, bulk C 6Ge and C 8Ge, as well as Ge-intercalated graphene on a SiC(0001) substrate, by density functional theory. In the presence of SiC(0001), there are three ways to obtain n-type graphene: i) intercalation between C layers; ii) intercalation at the interface to the substrate in combination with Ge deposition on the surface; and iii) cluster intercalation. All other configurations under study result in p-type states irrespective of the Ge coverage. We explain the origin of the different doping states and establish the conditions under which a transition occurs. © Copyright EPLA, 2012.
dc.publisherIOP Publishing
dc.titleGe-intercalated graphene: The origin of the p-type to n-type transition
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.identifier.journalEPL (Europhysics Letters)
kaust.personKaloni, Thaneshwor P.
kaust.personKahaly, M. Upadhyay
kaust.personCheng, Yingchun
kaust.personSchwingenschlögl, Udo


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