Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films
dc.contributor.author | Duan, Xiaofei | |
dc.contributor.author | Mi, Wenbo | |
dc.contributor.author | Guo, Zaibing | |
dc.contributor.author | Bai, Haili | |
dc.date.accessioned | 2015-08-03T09:46:22Z | |
dc.date.available | 2015-08-03T09:46:22Z | |
dc.date.issued | 2012-05 | |
dc.identifier.citation | Duan, X. F., Mi, W. B., Guo, Z. B., & Bai, H. L. (2012). Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films. Acta Materialia, 60(9), 3690–3697. doi:10.1016/j.actamat.2012.03.043 | |
dc.identifier.issn | 13596454 | |
dc.identifier.doi | 10.1016/j.actamat.2012.03.043 | |
dc.identifier.uri | http://hdl.handle.net/10754/562169 | |
dc.description.abstract | Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. | |
dc.description.sponsorship | This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100). | |
dc.publisher | Elsevier BV | |
dc.subject | Electrical properties | |
dc.subject | Magnetic thin films | |
dc.subject | Magnetoresistance | |
dc.subject | Nitrides | |
dc.subject | Sputtering | |
dc.title | Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films | |
dc.type | Article | |
dc.contributor.department | Imaging and Characterization Core Lab | |
dc.contributor.department | Core Labs | |
dc.identifier.journal | Acta Materialia | |
dc.contributor.institution | Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, China | |
kaust.person | Guo, Zaibing |