Show simple item record

dc.contributor.authorDuan, Xiaofei
dc.contributor.authorMi, Wenbo
dc.contributor.authorGuo, Zaibing
dc.contributor.authorBai, Haili
dc.date.accessioned2015-08-03T09:46:22Z
dc.date.available2015-08-03T09:46:22Z
dc.date.issued2012-05
dc.identifier.citationDuan, X. F., Mi, W. B., Guo, Z. B., & Bai, H. L. (2012). Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films. Acta Materialia, 60(9), 3690–3697. doi:10.1016/j.actamat.2012.03.043
dc.identifier.issn13596454
dc.identifier.doi10.1016/j.actamat.2012.03.043
dc.identifier.urihttp://hdl.handle.net/10754/562169
dc.description.abstractReactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).
dc.publisherElsevier BV
dc.subjectElectrical properties
dc.subjectMagnetic thin films
dc.subjectMagnetoresistance
dc.subjectNitrides
dc.subjectSputtering
dc.titleMagnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.identifier.journalActa Materialia
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, China
kaust.personGuo, Zaibing


This item appears in the following Collection(s)

Show simple item record