Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti 1-xCr xN films

Abstract
Reactive-sputtered epitaxial Ti 1-xCr xN films are ferromagnetic in the range of 0.17 ≤ x ≤ 0.51 due to the Cr-N-Cr double-exchange interaction below the Curie temperature (T C). The T C first increases, then decreases as x increases, and a maximum of 120 K appears at x = 0.47. All of the films are metallic with a transition near T C. A resistivity minimum ρ min is observed below 60 K in the films with 0.10 ≤ x ≤ 0.51 due to the effects of the weak localization and electron-electron interaction. The negative magnetoresistance (MR) is caused by the double-exchange interaction below T C and the weak localization can also contribute to MR below T min where ρ min appears. The x-dependent electron carrier densities reveal that the ferromagnetism is not from the carrier-mediated mechanism. The anomalous Hall resistivity follows the relation of ρxyA∝ρxx2, which is from the side-jump mechanism. © 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Citation
Duan, X. F., Mi, W. B., Guo, Z. B., & Bai, H. L. (2012). Magnetic and spin-dependent transport properties of reactive sputtered epitaxial Ti1−xCrxN films. Acta Materialia, 60(9), 3690–3697. doi:10.1016/j.actamat.2012.03.043

Acknowledgements
This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).

Publisher
Elsevier BV

Journal
Acta Materialia

DOI
10.1016/j.actamat.2012.03.043

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