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dc.contributor.authorTahini, H. A.
dc.contributor.authorChroneos, Alexander I.
dc.contributor.authorGrimes, Robin W.
dc.contributor.authorSchwingenschlögl, Udo
dc.contributor.authorDimoulas, Athanasios Dimoulas
dc.date.accessioned2015-08-03T09:46:05Z
dc.date.available2015-08-03T09:46:05Z
dc.date.issued2012-04-17
dc.identifier.issn09538984
dc.identifier.doi10.1088/0953-8984/24/19/195802
dc.identifier.urihttp://hdl.handle.net/10754/562156
dc.description.abstractDensity functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.
dc.description.sponsorshipThis publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.
dc.publisherIOP Publishing
dc.titleStrain-induced changes to the electronic structure of germanium
dc.typeArticle
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.identifier.journalJournal of Physics: Condensed Matter
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdom
dc.contributor.institutionMBE Laboratory, Institute of Materials Science, NCSR Demokritos, GR-15310 Athens, Greece
kaust.personSchwingenschlögl, Udo


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