Type
ArticleAuthors
Tahini, H. A.Chroneos, Alexander I.
Grimes, Robin W.
Schwingenschlögl, Udo

Dimoulas, Athanasios Dimoulas
KAUST Department
Computational Physics and Materials Science (CPMS)Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2012-04-17Online Publication Date
2012-04-17Print Publication Date
2012-05-16Permanent link to this record
http://hdl.handle.net/10754/562156
Metadata
Show full item recordAbstract
Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications. © 2012 IOP Publishing Ltd.Citation
Tahini, H., Chroneos, A., Grimes, R. W., Schwingenschlögl, U., & Dimoulas, A. (2012). Strain-induced changes to the electronic structure of germanium. Journal of Physics: Condensed Matter, 24(19), 195802. doi:10.1088/0953-8984/24/19/195802Sponsors
This publication was based on research supported by King Abdullah University for Science and Technology (KAUST). HT is grateful to Samuel Murphy (ICL) for useful discussions. Computing resources were provided by the HPC facility at ICL (www3.imperial.ac.uk/ict/services/highperformancecomputing). AC and AD acknowledge financial support from the EU FP7-PEOPLE-2010-IEF project REACT-273631.Publisher
IOP Publishingae974a485f413a2113503eed53cd6c53
10.1088/0953-8984/24/19/195802