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Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs

dc.contributor.authorSmith, Jeremy N.
dc.contributor.authorZhang, Weimin
dc.contributor.authorSougrat, Rachid
dc.contributor.authorZhao, Kui
dc.contributor.authorLi, Ruipeng
dc.contributor.authorCha, Dong Kyu
dc.contributor.authorAmassian, Aram
dc.contributor.authorHeeney, Martin J.
dc.contributor.authorMcCulloch, Iain A.
dc.contributor.authorAnthopoulos, Thomas D.
dc.date.accessioned2015-08-03T09:46:01Z
dc.date.available2015-08-03T09:46:01Z
dc.date.issued2012-04-10
dc.identifier.citationSmith, J., Zhang, W., Sougrat, R., Zhao, K., Li, R., Cha, D., … Anthopoulos, T. D. (2012). Solution-Processed Small Molecule-Polymer Blend Organic Thin-Film Transistors with Hole Mobility Greater than 5 cm2/Vs. Advanced Materials, 24(18), 2441–2446. doi:10.1002/adma.201200088
dc.identifier.issn09359648
dc.identifier.pmid22488874
dc.identifier.doi10.1002/adma.201200088
dc.identifier.urihttp://hdl.handle.net/10754/562153
dc.description.abstractUsing phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipThis work was funded by the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/E02730X, Research Councils UK (RCUK) and by King Abdullah University of Science and Technology (KAUST). We acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS. T.D.A. is an EPSRC Advanced Fellow and a RCUK Fellow/Lecturer.
dc.publisherWiley
dc.subjectblend organic semiconductors
dc.subjectorganic field-effect transistors
dc.subjectorganic semiconductors
dc.titleSolution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs
dc.typeArticle
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.contributor.departmentCore Labs
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalAdvanced Materials
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2BW, United Kingdom
dc.contributor.institutionCentre for Plastic Electronics, Department of Chemistry, Imperial College London, London SW7 2AZ, United Kingdom
kaust.personSougrat, Rachid
kaust.personZhao, Kui
kaust.personLi, Ruipeng
kaust.personCha, Dong Kyu
kaust.personAmassian, Aram
dc.date.published-online2012-04-10
dc.date.published-print2012-05-08


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