Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs
AuthorsSmith, Jeremy N.
Cha, Dong Kyu
Heeney, Martin J.
McCulloch, Iain A.
Anthopoulos, Thomas D.
KAUST DepartmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
Imaging and Characterization Core Lab
KAUST Solar Center (KSC)
Material Science and Engineering Program
Organic Electronics and Photovoltaics Group
Physical Science and Engineering (PSE) Division
Online Publication Date2012-04-10
Print Publication Date2012-05-08
Permanent link to this recordhttp://hdl.handle.net/10754/562153
MetadataShow full item record
AbstractUsing phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CitationSmith, J., Zhang, W., Sougrat, R., Zhao, K., Li, R., Cha, D., … Anthopoulos, T. D. (2012). Solution-Processed Small Molecule-Polymer Blend Organic Thin-Film Transistors with Hole Mobility Greater than 5 cm2/Vs. Advanced Materials, 24(18), 2441–2446. doi:10.1002/adma.201200088
SponsorsThis work was funded by the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/E02730X, Research Councils UK (RCUK) and by King Abdullah University of Science and Technology (KAUST). We acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS. T.D.A. is an EPSRC Advanced Fellow and a RCUK Fellow/Lecturer.
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