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    Solution-processed small molecule-polymer blend organic thin-film transistors with hole mobility greater than 5 cm 2/Vs

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    Type
    Article
    Authors
    Smith, Jeremy N.
    Zhang, Weimin
    Sougrat, Rachid cc
    Zhao, Kui cc
    Li, Ruipeng
    Cha, Dong Kyu
    Amassian, Aram cc
    Heeney, Martin J.
    McCulloch, Iain A.
    Anthopoulos, Thomas D. cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Core Labs
    Imaging and Characterization Core Lab
    KAUST Solar Center (KSC)
    Material Science and Engineering Program
    Organic Electronics and Photovoltaics Group
    Physical Science and Engineering (PSE) Division
    Date
    2012-04-10
    Online Publication Date
    2012-04-10
    Print Publication Date
    2012-05-08
    Permanent link to this record
    http://hdl.handle.net/10754/562153
    
    Metadata
    Show full item record
    Abstract
    Using phase-separated organic semiconducting blends containing a small molecule, as the hole transporting material, and a conjugated amorphous polymer, as the binder material, we demonstrate solution-processed organic thin-film transistors with superior performance characteristics that include; hole mobility >5 cm 2/Vs, current on/off ratio ≥10 6 and narrow transistor parameter spread. These exceptional characteristics are attributed to the electronic properties of the binder polymer and the advantageous nanomorphology of the blend film. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Citation
    Smith, J., Zhang, W., Sougrat, R., Zhao, K., Li, R., Cha, D., … Anthopoulos, T. D. (2012). Solution-Processed Small Molecule-Polymer Blend Organic Thin-Film Transistors with Hole Mobility Greater than 5 cm2/Vs. Advanced Materials, 24(18), 2441–2446. doi:10.1002/adma.201200088
    Sponsors
    This work was funded by the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/E02730X, Research Councils UK (RCUK) and by King Abdullah University of Science and Technology (KAUST). We acknowledge use of the D1 beam line at the Cornell High Energy Synchrotron Source supported by the National Science Foundation (NSF DMR-0225180) and NIH-NIGMS. T.D.A. is an EPSRC Advanced Fellow and a RCUK Fellow/Lecturer.
    Publisher
    Wiley
    Journal
    Advanced Materials
    DOI
    10.1002/adma.201200088
    PubMed ID
    22488874
    ae974a485f413a2113503eed53cd6c53
    10.1002/adma.201200088
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; KAUST Solar Center (KSC)

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