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dc.contributor.authorSun, Jian
dc.contributor.authorPatil, Samadhan B.
dc.contributor.authorSoh, Yeongah
dc.contributor.authorKose, Jürgen
dc.date.accessioned2015-08-03T09:44:43Z
dc.date.available2015-08-03T09:44:43Z
dc.date.issued2012-02-21
dc.identifier.issn18820778
dc.identifier.doi10.1143/APEX.5.033002
dc.identifier.urihttp://hdl.handle.net/10754/562097
dc.description.abstractA two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.
dc.publisherIOP Publishing
dc.titleStrong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device
dc.typeArticle
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalApplied Physics Express
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2AZ, United Kingdom
kaust.personSun, Jian


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