Type
ArticleKAUST Department
Core LabsImaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2012-02Permanent link to this record
http://hdl.handle.net/10754/562070
Metadata
Show full item recordAbstract
We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.Citation
Guo, Z. B., Mi, W. B., Zhang, Q., Zhang, B., Aboljadayel, R. O., & Zhang, X. X. (2012). Anomalous Hall effect in polycrystalline Ni films. Solid State Communications, 152(3), 220–224. doi:10.1016/j.ssc.2011.10.039Publisher
Elsevier BVJournal
Solid State Communicationsae974a485f413a2113503eed53cd6c53
10.1016/j.ssc.2011.10.039