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    Anomalous Hall effect in polycrystalline Ni films

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    Type
    Article
    Authors
    Guo, Zaibing
    Mi, Wenbo
    Zhang, Qiang cc
    Zhang, Bei
    Aboljadayel, Razan
    Zhang, Xixiang cc
    KAUST Department
    Core Labs
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2012-02
    Permanent link to this record
    http://hdl.handle.net/10754/562070
    
    Metadata
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    Abstract
    We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.
    Publisher
    Elsevier BV
    Journal
    Solid State Communications
    DOI
    10.1016/j.ssc.2011.10.039
    ae974a485f413a2113503eed53cd6c53
    10.1016/j.ssc.2011.10.039
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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