KAUST DepartmentImaging and Characterization Core Lab
Physical Sciences and Engineering (PSE) Division
Advanced Nanofabrication, Imaging and Characterization Core Lab
Materials Science and Engineering Program
Computational Physics and Materials Science (CPMS)
Permanent link to this recordhttp://hdl.handle.net/10754/562057
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AbstractFunctionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope. © 2011 American Chemical Society.
SponsorsH.T.W. and W.Y. acknowledge the financial support from the National Science Foundation of China (Grant 10832009; Grant 11090333) and Science Foundation of Chinese University (Grant 2011QNA4038).
PublisherAmerican Chemical Society (ACS)
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