KAUST DepartmentMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Spintronics Theory Group
KAUST Grant NumberN012509-00
Permanent link to this recordhttp://hdl.handle.net/10754/561957
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AbstractThe spin relaxation time of photoinduced conduction electrons has been measured in InGaN quantum disks in GaN nanowires as a function of temperature and In composition in the disks. The relaxation times are of the order of ∼100 ps at 300 K and are weakly dependent on temperature. Theoretical considerations show that the Elliott-Yafet scattering mechanism is essentially absent in these materials and the results are interpreted in terms of the D'yakonov-Perel' relaxation mechanism in the presence of Rashba spin-orbit coupling of the wurtzite structure. The calculated spin relaxation times are in good agreement with the measured values. © 2011 American Chemical Society.
CitationBanerjee, A., Doğan, F., Heo, J., Manchon, A., Guo, W., & Bhattacharya, P. (2011). Spin Relaxation in InGaN Quantum Disks in GaN Nanowires. Nano Letters, 11(12), 5396–5400. doi:10.1021/nl203091f
SponsorsThe work is supported by KAUST under Grant N012509-00.
PublisherAmerican Chemical Society (ACS)