Show simple item record

dc.contributor.authorZhu, Zhiyong
dc.contributor.authorCheng, Yingchun
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-08-03T09:34:05Z
dc.date.available2015-08-03T09:34:05Z
dc.date.issued2011-11-10
dc.identifier.citationZhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U. (2011). The origin of the pseudogap in α-Ga. Journal of Physics: Condensed Matter, 23(47), 475502. doi:10.1088/0953-8984/23/47/475502
dc.identifier.issn09538984
dc.identifier.pmid22075974
dc.identifier.doi10.1088/0953-8984/23/47/475502
dc.identifier.urihttp://hdl.handle.net/10754/561918
dc.description.abstractDensity functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.
dc.publisherIOP Publishing
dc.titleThe origin of the pseudogap in α-Ga
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentCore Labs
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Physics: Condensed Matter
kaust.personZhu, Zhiyong
kaust.personCheng, Yingchun
kaust.personSchwingenschlögl, Udo
dc.date.published-online2011-11-10
dc.date.published-print2011-11-30


This item appears in the following Collection(s)

Show simple item record