Type
ArticleKAUST Department
Computational Physics and Materials Science (CPMS)Core Labs
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-11-10Online Publication Date
2011-11-10Print Publication Date
2011-11-30Permanent link to this record
http://hdl.handle.net/10754/561918
Metadata
Show full item recordAbstract
Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.Citation
Zhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U. (2011). The origin of the pseudogap in α-Ga. Journal of Physics: Condensed Matter, 23(47), 475502. doi:10.1088/0953-8984/23/47/475502Publisher
IOP PublishingPubMed ID
22075974ae974a485f413a2113503eed53cd6c53
10.1088/0953-8984/23/47/475502
Scopus Count
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