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    The origin of the pseudogap in α-Ga

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    Type
    Article
    Authors
    Zhu, Zhiyong
    Cheng, Yingchun cc
    Schwingenschlögl, Udo cc
    KAUST Department
    Computational Physics and Materials Science (CPMS)
    Core Labs
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2011-11-10
    Online Publication Date
    2011-11-10
    Print Publication Date
    2011-11-30
    Permanent link to this record
    http://hdl.handle.net/10754/561918
    
    Metadata
    Show full item record
    Abstract
    Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry. © 2011 IOP Publishing Ltd.
    Citation
    Zhu, Z. Y., Cheng, Y. C., & Schwingenschlögl, U. (2011). The origin of the pseudogap in α-Ga. Journal of Physics: Condensed Matter, 23(47), 475502. doi:10.1088/0953-8984/23/47/475502
    Publisher
    IOP Publishing
    Journal
    Journal of Physics: Condensed Matter
    DOI
    10.1088/0953-8984/23/47/475502
    PubMed ID
    22075974
    ae974a485f413a2113503eed53cd6c53
    10.1088/0953-8984/23/47/475502
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program; Computational Physics and Materials Science (CPMS)

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