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dc.contributor.authorRabie, Mohamed A.
dc.contributor.authorBahgat, Ahmed B G
dc.contributor.authorRamadan, Khaled S.
dc.contributor.authorShobak, Hosam
dc.contributor.authorNasr, Tarek Adel Hosny
dc.contributor.authorAbdelhafez, Mohamed R.
dc.contributor.authorMoustafa, Eslam M.
dc.contributor.authorAnis, Mohab H.
dc.date.accessioned2015-08-03T09:34:00Z
dc.date.available2015-08-03T09:34:00Z
dc.date.issued2011-11
dc.identifier.isbn9781467304658
dc.identifier.doi10.1109/ICEAC.2011.6136674
dc.identifier.urihttp://hdl.handle.net/10754/561914
dc.description.abstractSemi-Dynamic Flip-Flops are widely used in state-of-art microprocessors. Moreover, scaling down traditional CMOS technology faces major challenges which rises the need for new devices for replacement. FinFET technology is a potential replacement due to similarity in both fabrication process and theory of operation to current CMOS technology. Hence, this paper presents the study of Semi Dynamic Flip Flops using both Independent gate and Tied gate FinFET devices in 32nm technology node. Furthermore, it studies the performance of these new circuits under process variations. © 2011 IEEE.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectIndependent-Gate FinFET
dc.subjectMOSFET
dc.subjectProcess Variations
dc.subjectSemi-Dynamic Flip-Flop
dc.subjectTied-Gate FinFET
dc.titleA comparative analysis between FinFET Semi-Dynamic Flip-Flop topologies under process variations
dc.typeConference Paper
dc.contributor.departmentElectrical Engineering Program
dc.identifier.journal2011 International Conference on Energy Aware Computing
dc.conference.date2011-11-30 to 2011-12-02
dc.conference.name2011 International Conference on Energy Aware Computing, ICEAC 2011
dc.conference.locationIstanbul, TUR
dc.contributor.institutionAmerican University in Cairo, Cairo, Egypt
kaust.personRamadan, Khaled S.
kaust.personBahgat, Ahmed B G
kaust.personNasr, Tarek Adel Hosny


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