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    Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

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    Type
    Article
    Authors
    Fahad, Hossain M.
    Smith, Casey
    Rojas, Jhonathan Prieto cc
    Hussain, Muhammad Mustafa cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Integrated Nanotechnology Lab
    Physical Science and Engineering (PSE) Division
    Date
    2011-10-12
    Permanent link to this record
    http://hdl.handle.net/10754/561899
    
    Metadata
    Show full item record
    Abstract
    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.
    Citation
    Fahad, H. M., Smith, C. E., Rojas, J. P., & Hussain, M. M. (2011). Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits. Nano Letters, 11(10), 4393–4399. doi:10.1021/nl202563s
    Sponsors
    We deeply appreciate the valuable technical discussion with Professor Frank Register of the University of Texas at Austin, useful logistic support by Kelly Rader, and generous baseline research funding from King Abdullah University of Science and Technology (KAUST).
    Publisher
    American Chemical Society (ACS)
    Journal
    Nano Letters
    DOI
    10.1021/nl202563s
    PubMed ID
    21923117
    ae974a485f413a2113503eed53cd6c53
    10.1021/nl202563s
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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