Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits
Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Integrated Nanotechnology Lab
Physical Science and Engineering (PSE) Division
Date
2011-10-12Permanent link to this record
http://hdl.handle.net/10754/561899
Metadata
Show full item recordAbstract
We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.Citation
Fahad, H. M., Smith, C. E., Rojas, J. P., & Hussain, M. M. (2011). Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits. Nano Letters, 11(10), 4393–4399. doi:10.1021/nl202563sSponsors
We deeply appreciate the valuable technical discussion with Professor Frank Register of the University of Texas at Austin, useful logistic support by Kelly Rader, and generous baseline research funding from King Abdullah University of Science and Technology (KAUST).Publisher
American Chemical Society (ACS)Journal
Nano LettersPubMed ID
21923117ae974a485f413a2113503eed53cd6c53
10.1021/nl202563s
Scopus Count
Related articles
- Are nanotube architectures more advantageous than nanowire architectures for field effect transistors?
- Authors: Fahad HM, Hussain MM
- Issue date: 2012
- Catching the electron in action in real space inside a Ge-Si core-shell nanowire transistor.
- Authors: Jaishi M, Pati R
- Issue date: 2017 Sep 21
- Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.
- Authors: Dhungana KB, Jaishi M, Pati R
- Issue date: 2016 Jul 13
- p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating.
- Authors: Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P, Krogstrup P, Nygård J, Micolich AP
- Issue date: 2018 Sep 12
- Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?
- Authors: Xu L, Yang J, Qiu C, Liu S, Zhou W, Li Q, Shi B, Ma J, Yang C, Lu J, Zhang Z
- Issue date: 2021 Jul 14