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    Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts

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    Type
    Article
    Authors
    Li, Jingqi
    Zhang, Xixiang cc
    KAUST Department
    Advanced Nanofabrication, Imaging and Characterization Core Lab
    Core Labs
    Imaging and Characterization Core Lab
    Material Science and Engineering Program
    Physical Science and Engineering (PSE) Division
    Date
    2011-09-08
    Online Publication Date
    2011-09-08
    Print Publication Date
    2011-09-01
    Permanent link to this record
    http://hdl.handle.net/10754/561869
    
    Metadata
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    Abstract
    The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.
    Publisher
    IOP Publishing
    Journal
    EPL (Europhysics Letters)
    DOI
    10.1209/0295-5075/95/68007
    ae974a485f413a2113503eed53cd6c53
    10.1209/0295-5075/95/68007
    Scopus Count
    Collections
    Articles; Imaging and Characterization Core Lab; Physical Science and Engineering (PSE) Division; Material Science and Engineering Program

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