Simulation of diode characteristics of carbon nanotube field-effect transistors with symmetric source and drain contacts
Type
ArticleAuthors
Li, JingqiZhang, Xixiang

KAUST Department
Advanced Nanofabrication, Imaging and Characterization Core LabCore Labs
Imaging and Characterization Core Lab
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-09-08Online Publication Date
2011-09-08Print Publication Date
2011-09-01Permanent link to this record
http://hdl.handle.net/10754/561869
Metadata
Show full item recordAbstract
The diode characteristics of carbon nanotube field-effect transistors (CNTFETs) with symmetric source and drain contacts have been experimentally found at zero gate voltage (Li J. et al., Appl. Phys. Lett., 92 (2008) 133111). We calculate this characteristic using a semiclassical method based on Schottky barrier transistor mechanism. The influences of metal work function, the diameter of the carbon nanotubes and the dielectric thickness on the rectification behavior have been studied. The calculation results show that the metal with a higher work function results in a better diode characteristics for a p-type CNTFET. For single-walled carbon nanotubes (SWNTs) with different band gaps, both forward current and reverse current increase with decreasing band gap, but the ratio of forward current to reverse current decreases with decreasing band gap. This result is well consistent with the experimental observations reported previously. The simulation of the dielectric thickness effect indicates that the thinner the dielectric layer, the better the rectification behavior. The CNTFETs without a bottom gate could not show the diode characteristics, which is consistent with the reported experimental observation. © 2011 Europhysics Letters Association.Publisher
IOP PublishingJournal
EPL (Europhysics Letters)ae974a485f413a2113503eed53cd6c53
10.1209/0295-5075/95/68007