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dc.contributor.authorFuentes-Fernandez, E. M A
dc.contributor.authorBaldenegro-Pérez, Leonardo Aurelio
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorHande, Abhiman
dc.contributor.authorShah, Pradeep
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-03T09:32:34Z
dc.date.available2015-08-03T09:32:34Z
dc.date.issued2011-09
dc.identifier.issn00381101
dc.identifier.doi10.1016/j.sse.2011.05.027
dc.identifier.urihttp://hdl.handle.net/10754/561855
dc.description.abstractLead zirconate titanate, Pb(Zr0.53,Ti0.47)O 3 or PZT, thin films and integrated cantilevers have been fabricated for energy harvesting applications. The PZT films were deposited on PECVD SiO2/Si substrates with a sol-gel derived ZrO2 buffer layer. It is found that lead content in the starting solution and ramp rate during film crystallization are critical to achieving large-grained films on the ZrO2 surface. The electrical properties of the PZT films were measured using metal-ferroelectric-metal and inter-digital electrode structures, and revealed substantial improvement in film properties by controlling the process conditions. Functional cantilevers are demonstrated using the optimized films with output of 1.4 V peak-to-peak at 1 kHz and 2.5 g. © 2011 Elsevier Ltd. All rights reserved.
dc.description.sponsorshipThe authors would like to thank to NSF phase I SBIR and the Texas Emerging Technology Found for partial financial support and the Army Research Laboratories for their assistance in dry etch process.
dc.publisherElsevier BV
dc.subjectCantilever
dc.subjectIntegration
dc.subjectMEMS
dc.subjectPerovskite
dc.subjectPiezoelectric material
dc.subjectPZT
dc.titleOptimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalSolid-State Electronics
dc.contributor.institutionUniversity of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX 75080, United States
dc.contributor.institutionTexas MicroPower Inc., 18803 Fortson Ave., Dallas TX 75252, United States
kaust.personAlshareef, Husam N.


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