Pulsed laser deposition and thermoelectric properties of In-and Yb-doped CoSb3 skutterudite thin films
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2011-07-29
Print Publication Date2011-08
Permanent link to this recordhttp://hdl.handle.net/10754/561824
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AbstractIn-and Yb-doped CoSb3 thin films were prepared by pulsed laser deposition. Process optimization studies revealed that a very narrow process window exists for the growth of single-phase skutterudite films. The electrical conductivity and Seebeck coefficient measured in the temperature range 300-700 K revealed an irreversible change on the first heating cycle in argon ambient, which is attributed to the enhanced surface roughness of the films or trace secondary phases. A power factor of 0.68 W m-1 K-1 was obtained at ∼700 K, which is nearly six times lower than that of bulk samples. This difference is attributed to grain boundary scattering that causes a drop in film conductivity. Copyright © Materials Research Society 2011.
CitationSarath Kumar, S. R., Alyamani, A., Graff, J. W., Tritt, T. M., & Alshareef, H. N. (2011). Pulsed laser deposition and thermoelectric properties of In- and Yb-doped CoSb3 skutterudite thin films. Journal of Materials Research, 26(15), 1836–1841. doi:10.1557/jmr.2011.198
SponsorsHA acknowledges the baseline funding from King Abdallah University of Science and Technology (KAUST) and the faculty initiated collaboration fund (FIC) grant. T. M. Tritt would like to acknowledge the financial support from Department of Energy/Experimental Program to Stimulate Competitive Research (DOE/EPSCoR) Implementation Grant No. (DE-FG02-04ER-46139) for the work at Clemson.
PublisherCambridge University Press (CUP)
JournalJournal of Materials Research