Show simple item record

dc.contributor.authorWondmagegn, Wudyalew T.
dc.contributor.authorSatyala, Nikhil T.
dc.contributor.authorMejia, Israel I.
dc.contributor.authorMao, Duo
dc.contributor.authorGowrisanker, Srinivas
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorStiegler, Harvey J.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorPieper, Ron J.
dc.contributor.authorGnade, Bruce E.
dc.date.accessioned2015-08-03T09:03:36Z
dc.date.available2015-08-03T09:03:36Z
dc.date.issued2011-04
dc.identifier.citationWondmagegn, W. T., Satyala, N. T., Mejia-Silva, I., Mao, D., Gowrisanker, S., Alshareef, H. N., … Gnade, B. E. (2011). Experimental and modeling study of the capacitance–voltage characteristics of metal–insulator–semiconductor capacitor based on pentacene/parylene. Thin Solid Films, 519(13), 4313–4318. doi:10.1016/j.tsf.2011.02.014
dc.identifier.issn00406090
dc.identifier.doi10.1016/j.tsf.2011.02.014
dc.identifier.urihttp://hdl.handle.net/10754/561743
dc.description.abstractThe capacitance-voltage (C-V) characteristics of metal-insulator- semiconductor (MIS) capacitors consisting of pentacene as an organic semiconductor and parylene as the dielectric have been investigated by experimental, analytical, and numerical analysis. The device simulation was performed using two-dimensional drift-diffusion methods taking into account the Poole-Frenkel field-dependent mobility. Pentacene bulk defect states and fixed charge density at the semiconductor/insulator interface were incorporated into the simulation. The analysis examined pentacene/parylene interface characteristics for various parylene thicknesses. For each thickness, the corresponding flat band voltage extracted from the C-V plot of the MIS structure was more negative than - 2.4 V. From the flat band voltage the existence of a significant mismatch between the work functions of the gate electrode and pentacene active material has been identified. Experimental and simulation results suggest the existence of interface charge density on the order of 3 × 1011 q/cm2 at the insulator/semiconductor interface. The frequency dispersion characteristics of the device are also presented and discussed. © 2011 Elsevier B.V.
dc.description.sponsorshipWe gratefully acknowledge the Department of Defense for supporting this work (Army Research Office Contract W911NF-07-2-0059).
dc.publisherElsevier BV
dc.subjectCapacitance
dc.subjectDefects
dc.subjectDispersion
dc.subjectInterface
dc.subjectPentacene
dc.subjectPoole-Frenkel
dc.titleExperimental and modeling study of the capacitance-voltage characteristics of metal-insulator-semiconductor capacitor based on pentacene/parylene
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalThin Solid Films
dc.contributor.institutionDepartment of Electrical Engineering, University of Texas at Tyler, Tyler, TX 75799, United States
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States
kaust.personAlshareef, Husam N.


This item appears in the following Collection(s)

Show simple item record