Arif, Suneela K.
Prisbrey, Keith A.
KAUST DepartmentPhysical Science and Engineering (PSE) Division
Preprint Posting Date2011-01-21
Online Publication Date2011-02-19
Print Publication Date2011-06
Permanent link to this recordhttp://hdl.handle.net/10754/561717
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AbstractStudies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al 0.75Cr 0.25N, Ga 0.75Cr 0.25N, and In 0.75Cr 0.25N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al 0.75Cr 0.25N and Ga 0.75Cr 0.25N are half-metallic dilute magnetic semiconductors while In 0.75Cr 0.25N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS.
CitationAmin, B., Arif, S., Ahmad, I., Maqbool, M., Ahmad, R., Goumri-Said, S., & Prisbrey, K. (2011). Cr-Doped III–V Nitrides: Potential Candidates for Spintronics. Journal of Electronic Materials, 40(6), 1428–1436. doi:10.1007/s11664-011-1539-7
JournalJournal of Electronic Materials