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dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorMajhi, Prashant
dc.date.accessioned2015-08-03T09:02:54Z
dc.date.available2015-08-03T09:02:54Z
dc.date.issued2011-02-18
dc.identifier.citationAlshareef, H. N., Quevedo-Lopez, M. A., & Majhi, P. (2011). Contact materials for nanoelectronics. MRS Bulletin, 36(2), 90–94. doi:10.1557/mrs.2011.9
dc.identifier.issn08837694
dc.identifier.doi10.1557/mrs.2011.9
dc.identifier.urihttp://hdl.handle.net/10754/561712
dc.description.abstractIn this article, we review current research activities in contact material development for electronic and nanoelectronic devices. A fundamental issue in contact materials research is to understand and control interfacial reactions and phenomena that modify the expected device performance. These reactions have become more challenging and more difficult to control as new materials have been introduced and as device sizes have entered the deep nanoscale. To provide an overview of this field of inquiry, this issue of MRS Bulletin includes articles on gate and contact materials for Si-based devices, junction contact materials for Si-based devices, and contact materials for alternate channel substrates (Ge and III-V), nanodevices. © 2011 Materials Research Society.
dc.publisherCambridge University Press (CUP)
dc.titleContact materials for nanoelectronics
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalMRS Bulletin
dc.contributor.institutionUniversity of Texas, Dallas, United States
dc.contributor.institutionSEMATECH, United States
kaust.personAlshareef, Husam N.
dc.date.published-online2011-02-18
dc.date.published-print2011-02


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