Type
ArticleKAUST Department
Functional Nanomaterials and Devices Research GroupMaterial Science and Engineering Program
Physical Science and Engineering (PSE) Division
Date
2011-02-18Online Publication Date
2011-02-18Print Publication Date
2011-02Permanent link to this record
http://hdl.handle.net/10754/561712
Metadata
Show full item recordAbstract
In this article, we review current research activities in contact material development for electronic and nanoelectronic devices. A fundamental issue in contact materials research is to understand and control interfacial reactions and phenomena that modify the expected device performance. These reactions have become more challenging and more difficult to control as new materials have been introduced and as device sizes have entered the deep nanoscale. To provide an overview of this field of inquiry, this issue of MRS Bulletin includes articles on gate and contact materials for Si-based devices, junction contact materials for Si-based devices, and contact materials for alternate channel substrates (Ge and III-V), nanodevices. © 2011 Materials Research Society.Citation
Alshareef, H. N., Quevedo-Lopez, M. A., & Majhi, P. (2011). Contact materials for nanoelectronics. MRS Bulletin, 36(2), 90–94. doi:10.1557/mrs.2011.9Publisher
Cambridge University Press (CUP)Journal
MRS Bulletinae974a485f413a2113503eed53cd6c53
10.1557/mrs.2011.9