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dc.contributor.authorYan, Jianchang
dc.contributor.authorWang, Junxi
dc.contributor.authorCong, Peipei
dc.contributor.authorSun, Lili
dc.contributor.authorLiu, Naixin
dc.contributor.authorLiu, Zhe
dc.contributor.authorZhao, Chao
dc.contributor.authorLi, Jinmin
dc.date.accessioned2015-08-03T09:00:51Z
dc.date.available2015-08-03T09:00:51Z
dc.date.issued2010-11-02
dc.identifier.citationYan, J., Wang, J., Cong, P., Sun, L., Liu, N., Liu, Z., … Li, J. (2010). Improved performance of UV-LED by p-AlGaN with graded composition. Physica Status Solidi (c), 8(2), 461–463. doi:10.1002/pssc.201000458
dc.identifier.issn18626351
dc.identifier.doi10.1002/pssc.201000458
dc.identifier.urihttp://hdl.handle.net/10754/561631
dc.description.abstractAlGaN-based ultraviolet light emitting diodes (UV-LEDs) on AlN/sapphire template were grown by metal organic chemical vapour deposition. The AlN template was characterized by atomic force microscopy and high resolution X-ray diffraction. Atomic force microscopy image shows that the AlN surface is very flat, while high resolution X-ray diffraction results prove the good crystalline quality of the AlN template. A novel structure UV-LED which has several p-AlGaN layers with graded composition is compared with a common structure UV-LED which has a single p-Al0.5Ga0.5N layer. The forward bias voltage at 20 mA driving current for the novel structure UV-LED is nearly 3 V higher than that of the common structure UV-LED, however, the electroluminescence intensity of the former is over two times higher than that of the latter. The total quantum efficiency of the novel structure UV-LED is more than 50% higher than that of the common structure UV-LED. The improvement is considered to be the result of better holes injection efficiency in the novel structure UV-LED. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.publisherWiley
dc.subjectAlGaN
dc.subjectElectroluminescence
dc.subjectGraded composition
dc.subjectUV-LED
dc.titleImproved performance of UV-LED by p-AlGaN with graded composition
dc.typeArticle
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Lab
dc.identifier.journalphysica status solidi (c)
dc.contributor.institutionSemiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China
kaust.personZhao, Chao
dc.date.published-online2010-11-02
dc.date.published-print2011-02


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