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dc.contributor.authorTan, Cheeloon
dc.contributor.authorWang, Yang
dc.contributor.authorDjie, Hery Susanto
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2015-08-03T09:00:18Z
dc.date.available2015-08-03T09:00:18Z
dc.date.issued2009-09
dc.identifier.issn00189197
dc.identifier.doi10.1109/JQE.2009.2020055
dc.identifier.urihttp://hdl.handle.net/10754/561616
dc.description.abstractThis paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.
dc.description.sponsorshipThis work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U.S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectBroadband laser
dc.subjectHomogeneous broadening
dc.subjectInhomogeneous broadening
dc.subjectOptical gain broadening
dc.subjectSelf-assembled quantum dot
dc.subjectSemiconductor laser
dc.subjectSupercontinuum
dc.titleThe spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentElectrical Engineering Program
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalIEEE Journal of Quantum Electronics
dc.contributor.institutionCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United States
dc.contributor.institutionOpticomp Corporation, Zephyr Cove, NV 89448-2779, United States
dc.contributor.institutionJDS Uniphase Corporation, San Jose, CA 95134, United States
kaust.personOoi, Boon S.


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