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    The spectral analysis and threshold limits of quasi-supercontinuum self-assembled quantum dot interband lasers

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    Type
    Article
    Authors
    Tan, Cheeloon
    Wang, Yang
    Djie, Hery Susanto
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Physical Science and Engineering (PSE) Division
    Date
    2009-09
    Permanent link to this record
    http://hdl.handle.net/10754/561616
    
    Metadata
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    Abstract
    This paper presents a theoretical model to explain the quasi-supercontinuum interband emission from InGaAs/GaAs self-assembled semiconductor quantum dot lasers by accounting for both inhomogeneous and homogeneous optical gain broadening. The experimental and theoretical agreement of a room temperature (293 K) broadband laser emission confirms the presence of multiple-state lasing actions in highly inhomogeneous dot ensembles. The corresponding full-width half-maximum of the photoluminescence is 76 meV as opposed to those wideband lasing coverage at only low temperature (∼60 K) from typical quantum dot lasers. A newly proposed change of homogeneous broadening with injection that occurs only in highly inhomogeneous quantum dot system is critical to account for the continuous wideband lasing but not the conventional ideas of carrier dynamics in semiconductor lasers. In addition, the analysis of threshold conditions reveals that broadband lasing only occurs when the energy spacing between quantized energy states is comparable to the inhomogeneous broadening of quantum-dot nanostructures. The study is important in providing a picture of this novel device and realization of broad lasing coverage for diverse applications, especially in the research field of short-pulse generation and ultra-fast phenomena in semiconductor quantum-dot laser. © 2009 IEEE.
    Citation
    Tan, C.-L., Wang, Y., Djie, H. S., & Ooi, B.-S. (2009). The Spectral Analysis and Threshold Limits of Quasi-Supercontinuum Self-Assembled Quantum Dot Interband Lasers. IEEE Journal of Quantum Electronics, 45(9), 1168–1176. doi:10.1109/jqe.2009.2020055
    Sponsors
    This work was supported in part by the National Science Foundation (NSF) under Grant 0725647, U.S. Army Research Laboratory, Commonwealth of Pennsylvania, Department of Community and Economic Development.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    IEEE Journal of Quantum Electronics
    DOI
    10.1109/JQE.2009.2020055
    ae974a485f413a2113503eed53cd6c53
    10.1109/JQE.2009.2020055
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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