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dc.contributor.authorZhao, Kui
dc.contributor.authorNgongang Ndjawa, Guy Olivier
dc.contributor.authorJagadamma, Lethy Krishnan
dc.contributor.authorEl Labban, Abdulrahman
dc.contributor.authorHu, Hanlin
dc.contributor.authorWang, Qingxiao
dc.contributor.authorLi, Ruipeng
dc.contributor.authorAbdelsamie, Maged
dc.contributor.authorBeaujuge, Pierre
dc.contributor.authorAmassian, Aram
dc.date.accessioned2015-08-02T10:25:01Z
dc.date.available2015-08-02T10:25:01Z
dc.date.issued2015-07-30
dc.identifier.citationHighly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter 2015 Nano Energy
dc.identifier.issn22112855
dc.identifier.doi10.1016/j.nanoen.2015.07.018
dc.identifier.urihttp://hdl.handle.net/10754/561611
dc.description.abstractAchieving high performance and reliable organic solar cells hinges on the development of stable and energetically suitable hole transporting buffer layers in tune with the electrode and photoactive materials of the solar cell stack. Here we have identified solution-processed copper(I) iodide (CuI) thin films with low-temperature processing conditions as an effective hole–transporting layer (HTL) for a wide range of polymer:fullerene bulk heterojunction (BHJ) systems. The solar cells using CuI HTL show higher power conversion efficiency (PCE) in standard device structure for polymer blends, up to PCE of 8.8%, as compared with poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL, for a broad range of polymer:fullerene systems. The CuI layer properties and solar cell device behavior are shown to be remarkably robust and insensitive to a wide range of processing conditions of the HTL, including processing solvent, annealing temperature (room temperature up to 200 °C), and film thickness. CuI is also shown to improve the overall lifetime of solar cells in the standard architecture as compared to PEDOT:PSS. We further demonstrate promising solar cell performance when using CuI as top HTL in an inverted device architecture. The observation of uncommon properties, such as photoconductivity of CuI and templating effects on the BHJ layer formation, are also discussed. This study points to CuI as being a good candidate to replace PEDOT:PSS in solution-processed solar cells thanks to the facile implementation and demonstrated robustness of CuI thin films.
dc.language.isoen
dc.publisherElsevier BV
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S2211285515003110
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Nano Energy. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nano Energy, 30 July 2015. DOI: 10.1016/j.nanoen.2015.07.018
dc.subjectOrganic photovoltaics
dc.subjectOrganic solar cells
dc.subjectCopper iodide
dc.subjectHole transporting layer
dc.subjectBuffer layer
dc.subjectSolution processed
dc.titleHighly efficient organic solar Cells based on a robust room-temperature solution-processed copper iodide hole transporter
dc.typeArticle
dc.contributor.departmentElectron Microscopy
dc.contributor.departmentImaging and Characterization Core Lab
dc.contributor.departmentKAUST Solar Center (KSC)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentOffice of the VP
dc.contributor.departmentOrganic Electronics and Photovoltaics Group
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalNano Energy
dc.eprint.versionPost-print
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personZhao, Kui
kaust.personJagadamma, Lethy Krishnan
kaust.personBeaujuge, Pierre
kaust.personAmassian, Aram
kaust.personNgongang Ndjawa, Guy Olivier
kaust.personEl Labban, Abdulrahman
kaust.personHu, Hanlin
kaust.personWang, Qingxiao
kaust.personLi, Ruipeng
kaust.personAbdelsamie, Maged
refterms.dateFOA2017-07-30T00:00:00Z
dc.date.published-online2015-07-30
dc.date.published-print2015-09


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