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dc.contributor.authorFuentes-Fernandez, E. M A
dc.contributor.authorDebray-Mechtaly, W.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorRajasekaran, Arvindh
dc.contributor.authorHande, Abhiman
dc.contributor.authorShah, Pradeep
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-02T09:14:57Z
dc.date.available2015-08-02T09:14:57Z
dc.date.issued2010-11-18
dc.identifier.citationFuentes-Fernandez, E., Debray-Mechtaly, W., Quevedo-Lopez, M. A., Gnade, B., Rajasekaran, A., Hande, A., … Alshareef, H. N. (2010). Fabrication and Characterization of Pb(Zr0.53,Ti0.47)O3-Pb(Nb1/3,Zn2/3)O3 Thin Films on Cantilever Stacks. Journal of Electronic Materials, 40(1), 85–91. doi:10.1007/s11664-010-1407-x
dc.identifier.issn03615235
dc.identifier.doi10.1007/s11664-010-1407-x
dc.identifier.urihttp://hdl.handle.net/10754/561593
dc.description.abstract0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
dc.description.sponsorshipThe authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.
dc.publisherSpringer Nature
dc.subjectcantilever
dc.subjectintegration
dc.subjectperovskite
dc.subjectPiezoelectric material
dc.subjectPZT-PZN
dc.subjectrelaxor
dc.titleFabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalJournal of Electronic Materials
dc.contributor.institutionUniversity of Texas at Dallas, 800 W. Campbell Rd., Richardson, TX 75080, United States
dc.contributor.institutionTexas Micro Power Inc., 7920 Beltline Rd., Dallas, TX 75254, United States
kaust.personAlshareef, Husam N.
dc.date.published-online2010-11-18
dc.date.published-print2011-01


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