Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks

Abstract
0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.

Citation
Fuentes-Fernandez, E., Debray-Mechtaly, W., Quevedo-Lopez, M. A., Gnade, B., Rajasekaran, A., Hande, A., … Alshareef, H. N. (2010). Fabrication and Characterization of Pb(Zr0.53,Ti0.47)O3-Pb(Nb1/3,Zn2/3)O3 Thin Films on Cantilever Stacks. Journal of Electronic Materials, 40(1), 85–91. doi:10.1007/s11664-010-1407-x

Acknowledgements
The authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.

Publisher
Springer Nature

Journal
Journal of Electronic Materials

DOI
10.1007/s11664-010-1407-x

Permanent link to this record