Fabrication and characterization of Pb(Zr 0.53,Ti 0.47)O 3-Pb(Nb 1/3,Zn 2/3)O 3 thin films on cantilever stacks
AuthorsFuentes-Fernandez, E. M A
Quevedo-López, Manuel Angel Quevedo
Gnade, Bruce E.
Alshareef, Husam N.
KAUST DepartmentPhysical Sciences and Engineering (PSE) Division
Materials Science and Engineering Program
Functional Nanomaterials and Devices Research Group
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Abstract0.9Pb(Zr 0.53,Ti 0.47)O 3-0.1Pb(Zn 1/3,Nb 2/3)O 3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO 2/Si or SiO 2/Si 3N 4/SiO 2/poly-Si/Si membranes capped with a sol-gel-derived ZrO 2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO 3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO 2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure. © 2010 TMS.
SponsorsThe authors would like to thank NSF phase I STTR (Grant No. 810391 and 0937831) and the Texas Emerging Technology Fund for their financial support.
JournalJournal of Electronic Materials