Show simple item record

dc.contributor.authorGutiérrez-Heredia, Gerardo
dc.contributor.authorGonzález, Luis A.
dc.contributor.authorAlshareef, Husam N.
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.date.accessioned2015-08-02T09:14:38Z
dc.date.available2015-08-02T09:14:38Z
dc.date.issued2010-10-04
dc.identifier.citationGutiérrez-Heredia, G., González, L. A., Alshareef, H. N., Gnade, B. E., & Quevedo-López, M. (2010). A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes. Semiconductor Science and Technology, 25(11), 115001. doi:10.1088/0268-1242/25/11/115001
dc.identifier.issn02681242
dc.identifier.doi10.1088/0268-1242/25/11/115001
dc.identifier.urihttp://hdl.handle.net/10754/561579
dc.description.abstractWe present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.
dc.publisherIOP Publishing
dc.titleA flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes
dc.typeArticle
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalSemiconductor Science and Technology
dc.contributor.institutionDepartamento de Investigación en Física, Universidad de Sonora, Hermosillo, Sonora 83190, Mexico
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080-3021, United States
dc.contributor.institutionDepartamento de Polímeros y Materiales, Universidad de Sonora, Hermosillo, Sonora 83190, Mexico
kaust.personAlshareef, Husam N.
dc.date.published-online2010-10-04
dc.date.published-print2010-11-01


This item appears in the following Collection(s)

Show simple item record