Fundamental and dynamic properties of intermixed InGaAs-InGaAsP quantum-well lasers
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/561503
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AbstractThe fundamental and dynamic properties of InGaAs-InGaAsP lasers, where emission wavelengths were blue-shifted by quantum-well intermixing through ion implantation and annealing, were investigated to assess possible degradation by intermixing. It was found that the fundamental properties such as threshold current and slope efficiency were largely unchanged even after as much as 120 nm of wavelength shift. Meanwhile, the dynamic properties such as modulation efficiency and K factor were degraded after just a moderate degree of intermixing, but the degradation was not worsened by further intermixing. Provided the finite degradation of dynamic properties is tolerable, the present intermixing technique will be very useful for the fabrication of photonic integrated circuits. © 2006 IEEE.
CitationChen, C., Djie, H. S., Ding, Y. H., Ooi, B. S., Hwang, J. C. M., & Aimez, V. (2010). Fundamental and Dynamic Properties of Intermixed InGaAs-InGaAsP Quantum-Well Lasers. IEEE Journal of Quantum Electronics, 46(9), 1368–1374. doi:10.1109/jqe.2010.2047939
SponsorsManuscript received February 18, 2010; revised March 28, 2010; accepted April 4, 2010. Date of current version July 23, 2010. This work was supported in part by the U.S. National Science Foundation, under Grant 0725647US, and the U.S. Army Research Laboratory, under Cooperative Agreement No. W911NF-07-2-0064. This paper was recommended by Associate Editor L.J. Mawst.