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dc.contributor.authorUseinov, Arthur
dc.contributor.authorDeminov, R. G.
dc.contributor.authorUseinov, Niazbeck Kh H
dc.contributor.authorTagirov, Lenar R.
dc.date.accessioned2015-08-02T09:12:40Z
dc.date.available2015-08-02T09:12:40Z
dc.date.issued2010-05-03
dc.identifier.citationUseinov, A. N., Deminov, R. G., Useinov, N. K., & Tagirov, L. R. (2010). Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions. Physica Status Solidi (b), 247(7), 1797–1801. doi:10.1002/pssb.200945565
dc.identifier.issn03701972
dc.identifier.doi10.1002/pssb.200945565
dc.identifier.urihttp://hdl.handle.net/10754/561491
dc.description.abstractWe present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
dc.description.sponsorshipThis work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.
dc.publisherWiley
dc.subjectMagnetoresistance
dc.subjectSpin polarized transport
dc.subjectTunneling
dc.titleTunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions
dc.typeArticle
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalphysica status solidi (b)
dc.contributor.institutionKazan State University, 420008 Kazan, Russian Federation
kaust.personUseinov, Arthur


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