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    Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

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    Type
    Article
    Authors
    Useinov, Arthur
    Deminov, R. G.
    Useinov, Niazbeck Kh H
    Tagirov, Lenar R.
    KAUST Department
    Physical Science and Engineering (PSE) Division
    Date
    2010-05-03
    Permanent link to this record
    http://hdl.handle.net/10754/561491
    
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    Abstract
    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Citation
    Useinov, A. N., Deminov, R. G., Useinov, N. K., & Tagirov, L. R. (2010). Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions. Physica Status Solidi (b), 247(7), 1797–1801. doi:10.1002/pssb.200945565
    Sponsors
    This work was partly supported by the Russian Ministry of Science and Education (including the contract P902), and RFBR, project no. 10-02-91225-CT_a.
    Publisher
    Wiley
    Journal
    physica status solidi (b)
    DOI
    10.1002/pssb.200945565
    ae974a485f413a2113503eed53cd6c53
    10.1002/pssb.200945565
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division

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