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dc.contributor.authorMao, Duo
dc.contributor.authorQuevedo-López, Manuel Angel Quevedo
dc.contributor.authorStiegler, Harvey J.
dc.contributor.authorGnade, Bruce E.
dc.contributor.authorAlshareef, Husam N.
dc.date.accessioned2015-08-02T09:12:03Z
dc.date.available2015-08-02T09:12:03Z
dc.date.issued2010-05
dc.identifier.issn15661199
dc.identifier.doi10.1016/j.orgel.2010.02.012
dc.identifier.urihttp://hdl.handle.net/10754/561465
dc.description.abstractThe impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
dc.description.sponsorshipThe authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.
dc.publisherElsevier BV
dc.subjectFerroelectric polymer
dc.subjectFlexible electronics
dc.subjectNon-volatile memory
dc.subjectP(VDF-TrFE)
dc.titleOptimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
dc.typeArticle
dc.contributor.departmentMaterials Science and Engineering Program
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Division
dc.contributor.departmentFunctional Nanomaterials and Devices Research Group
dc.identifier.journalOrganic Electronics
dc.contributor.institutionDepartment of Material Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, United States
kaust.personAlshareef, Husam N.


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