Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics
Quevedo-López, Manuel Angel Quevedo
Stiegler, Harvey J.
Gnade, Bruce E.
Alshareef, Husam N.
KAUST DepartmentFunctional Nanomaterials and Devices Research Group
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/561465
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AbstractThe impact of thermal treatment and thickness on the polarization and leakage current of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer thin film capacitors has been studied. The evolution of the film morphology, crystallinity and bonding orientation as a function of annealing temperature and thickness were characterized using multiple techniques. Electrical performance of the devices was correlated with the material properties. It was found that annealing at or slightly above the Curie temperature (Tc) is the optimal temperature for high polarization, smooth surface morphology and low leakage current. Higher annealing temperature (but below the melting temperature Tm) favors larger size β crystallites through molecular chain self-organization, resulting in increased film roughness, and the vertical polarization tends to saturate. Metal-Ferroelectric-Metal (MFM) capacitors consistently achieved Ps, Pr and Vc of 8.5 μC/cm2, 7.4 μC/cm2 and 10.2 V, respectively.
CitationMao, D., Quevedo-Lopez, M. A., Stiegler, H., Gnade, B. E., & Alshareef, H. N. (2010). Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics. Organic Electronics, 11(5), 925–932. doi:10.1016/j.orgel.2010.02.012
SponsorsThe authors thank the Army Research Laboratory (ARL) for partial financial support of this project. We would also like to thank Dr. Eric Forsythe of ARL for very helpful discussions regarding non-volatile memory integration.