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dc.contributor.authorChroneos, Alexander I.
dc.contributor.authorKube, R.
dc.contributor.authorBracht, Hartmut A.
dc.contributor.authorGrimes, Robin W.
dc.contributor.authorSchwingenschlögl, Udo
dc.date.accessioned2015-08-02T09:12:00Z
dc.date.available2015-08-02T09:12:00Z
dc.date.issued2010-04
dc.identifier.issn00092614
dc.identifier.doi10.1016/j.cplett.2010.03.005
dc.identifier.urihttp://hdl.handle.net/10754/561463
dc.description.abstractSecondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
dc.description.sponsorshipComputing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.
dc.publisherElsevier BV
dc.titleVacancy-indium clusters in implanted germanium
dc.typeArticle
dc.contributor.departmentComputational Physics and Materials Science (CPMS)
dc.contributor.departmentMaterial Science and Engineering Program
dc.contributor.departmentPhysical Science and Engineering (PSE) Division
dc.identifier.journalChemical Physics Letters
dc.contributor.institutionDepartment of Materials, Imperial College London, London, SW7 2BP, United Kingdom
dc.contributor.institutionInstitute of Material Physics, University of Münster, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany
kaust.personSchwingenschlögl, Udo


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