KAUST DepartmentComputational Physics and Materials Science (CPMS)
Material Science and Engineering Program
Physical Science and Engineering (PSE) Division
Permanent link to this recordhttp://hdl.handle.net/10754/561463
MetadataShow full item record
AbstractSecondary ion mass spectroscopy measurements of heavily indium doped germanium samples revealed that a significant proportion of the indium dose is immobile. Using electronic structure calculations we address the possibility of indium clustering with point defects by predicting the stability of indium-vacancy clusters, InnVm. We find that the formation of large clusters is energetically favorable, which can explain the immobility of the indium ions. © 2010 Elsevier B.V. All rights reserved.
CitationChroneos, A., Kube, R., Bracht, H., Grimes, R. W., & Schwingenschlögl, U. (2010). Vacancy–indium clusters in implanted germanium. Chemical Physics Letters, 490(1-3), 38–40. doi:10.1016/j.cplett.2010.03.005
SponsorsComputing resources were provided by the HPC facilities of Imperial College London and in this regard we particularly thank Simon Burbidge. H. B. acknowledges support from the Deutsche Forschungsgemeinschaft (contract BR 1520/6-2). We thank M. Posselt and B. Schmidt from the research center Dresden-Rossendorf for the indium implantation in germanium.
JournalChemical Physics Letters