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dc.contributor.authorZhao, Chao
dc.contributor.authorNg, Tien Khee
dc.contributor.authorPrabaswara, Aditya
dc.contributor.authorConroy, Michele
dc.contributor.authorJahangir, Shafat
dc.contributor.authorFrost, Thomas
dc.contributor.authorO'Connell, John
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter
dc.contributor.authorBhattacharya, Pallab
dc.contributor.authorOoi, Boon S.
dc.date.accessioned2015-07-28T09:41:36Z
dc.date.available2015-07-28T09:41:36Z
dc.date.issued2015
dc.identifier.citationChao Zhao, Tien Khee Ng, Aditya Prabaswara, M. Conroy, S. Jahangir, T. Frost, J. O'Connell, J. D. Holmes, P. Parbrook, P. Bhattacharya and B. S. Ooi, "An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination", Nanoscale, (2015).
dc.identifier.issn2040-3364
dc.identifier.issn2040-3372
dc.identifier.pmid26242178
dc.identifier.doi10.1039/C5NR03448E
dc.identifier.urihttp://hdl.handle.net/10754/561164
dc.description.abstractWe present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.
dc.description.sponsorshipThe work is supported by KAUST Competitive Research Grant and baseline funding.
dc.publisherRoyal Society of Chemistry (RSC)
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C5NR03448E
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.titleAn enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
dc.typeArticle
dc.contributor.departmentPhotonics Laboratory
dc.contributor.departmentImaging and Characterization Core Lab
dc.identifier.journalNanoscale
dc.eprint.versionPublisher's Version/PDF
dc.contributor.institutionTyndall National Institute, University College Cork, Lee Maltings, Dyke
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University
refterms.dateFOA2018-06-13T10:14:23Z


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