An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
Ng, Tien Khee
Holmes, Justin D.
Ooi, Boon S.
Permanent link to this recordhttp://hdl.handle.net/10754/561164
MetadataShow full item record
AbstractWe present a detailed study on the effects of dangling bond passivation and the comparison of different sulfides passivation process on the properties of InGaN/GaN quantum-disk (Qdisk)-in-nanowire based light emitting diodes (NW-LEDs). Our results demonstrated the first organic sulfide passivation process for nitride nanowires (NWs). The results from Raman spectroscopy, photoluminescence (PL) measurements, and X-ray photoelectron spectroscopy (XPS) showed octadecylthiol (ODT) effectively passivated the surface states, and altered the surface dynamic charge, thereby recovered the band-edge emission. The effectiveness of the process with passivation duration was also studied. Moreover, we also compared the electro-optical performance of NW-LEDs emitting at green wavelength before and after ODT passivation. We have shown that the Shockley-Read-Hall (SRH) non-radiative recombination of NW-LEDs can be greatly reduced after passivation by ODT, which led to a much faster increasing trend of quantum efficiency, and higher peak efficiency. Our results highlighted the research opportunity in employing this technique for further design and realization of high performance NW-LEDs and NW-lasers.
CitationChao Zhao, Tien Khee Ng, Aditya Prabaswara, M. Conroy, S. Jahangir, T. Frost, J. O'Connell, J. D. Holmes, P. Parbrook, P. Bhattacharya and B. S. Ooi, "An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination", Nanoscale, (2015).
SponsorsThe work is supported by KAUST Competitive Research Grant and baseline funding.
PublisherRoyal Society of Chemistry (RSC)
Except where otherwise noted, this item's license is described as This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
- Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics.
- Authors: Zhao C, Ng TK, ElAfandy RT, Prabaswara A, Consiglio GB, Ajia IA, Roqan IS, Janjua B, Shen C, Eid J, Alyamani AY, El-Desouki MM, Ooi BS
- Issue date: 2016 Jul 13
- Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon.
- Authors: Nguyen HP, Djavid M, Cui K, Mi Z
- Issue date: 2012 May 17
- Removal of surface states and recovery of band-edge emission in InAs nanowires through surface passivation.
- Authors: Sun MH, Joyce HJ, Gao Q, Tan HH, Jagadish C, Ning CZ
- Issue date: 2012 Jul 11
- Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.
- Authors: Lu T, Li S, Zhang K, Liu C, Yin Y, Wu L, Wang H, Yang X, Xiao G, Zhou Y
- Issue date: 2011 Sep 12
- Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.
- Authors: Zhang YP, Zhang ZH, Liu W, Tan ST, Ju ZG, Zhang XL, Ji Y, Wang LC, Kyaw Z, Hasanov N, Zhu BB, Lu SP, Sun XW, Demir HV
- Issue date: 2015 Feb 9