Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
Chang, Chih-Yuan S.
KAUST DepartmentMaterials Science and Engineering Program
Physical Sciences and Engineering (PSE) Division
Online Publication Date2015-07-16
Print Publication Date2015-12
Permanent link to this recordhttp://hdl.handle.net/10754/561082
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AbstractThe emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
CitationDetermination of band alignment in the single-layer MoS2/WSe2 heterojunction 2015, 6:7666 Nature Communications
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