Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
Type
ArticleKAUST Department
Materials Science and Engineering ProgramDate
2015-07-08Online Publication Date
2015-07-08Print Publication Date
2015-12Permanent link to this record
http://hdl.handle.net/10754/560371
Metadata
Show full item recordAbstract
Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.Citation
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation 2015, 5:12014 Scientific ReportsPublisher
Springer NatureJournal
Scientific ReportsPubMed ID
26152225Additional Links
http://www.nature.com/doifinder/10.1038/srep12014ae974a485f413a2113503eed53cd6c53
10.1038/srep12014
Scopus Count
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