Zidan, Mohammed A.; Omran, Hesham; Salem, Ahmed Sultan; Fahmy, Hossam Aly Hassan; Salama, Khaled N.(IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE), 2015-01)[Article]
Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
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