Zidan, Mohammed A.; Eltawil, Ahmed M.; Fahmy, Hossam A.H.; Kurdahi, Fadi; Salama, Khaled N.(IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE), 2014-06-18)[Article]
In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied.
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