• Hydrothermal synthesis of p-type nanocrystalline NiO nanoplates for high response and low concentration hydrogen gas sensor application

      Nakate, Umesh T.; Lee, Gun Hee; Ahmad, Rafiq; Patil, Pramila; Bhopate, Dhanaji P.; Hahn, Y.B.; Yu, Y.T.; Suh, Eun-kyung (Elsevier BV, 2018-05-30)
      High quality nanocrystalline NiO nanoplates were synthesized using surfactant and template free hydrothermal route. The gas sensing properties of NiO nanoplates were investigated. The nanoplates morphology of NiO with average thickness ~20 nm and diameter ~100 nm has been confirmed by FE-SEM and TEM. Crystalline quality of NiO has been studied using HRTEM and SAED techniques. Structural properties and elemental compositions have been analysed by XRD and energy dispersive spectrometer (EDS) respectively. The detailed investigation of structural parameters has been carried out. The optical properties of NiO were analyzed from UV-Visible and photoluminescence spectra. NiO nanoplates have good selectivity towards hydrogen (H2) gas. The lowest H2 response of 3% was observed at 2 ppm, whereas 90% response was noted for 100 ppm at optimized temperature of 200 °C with response time 180 s. The H2 responses as functions of different operating temperature as well as gas concentrations have been studied along with sensor stability. The hydrogen sensing mechanism was also elucidated.
    • Biosensor for the detection of Listeria monocytogenes: emerging trends

      Soni, Dharmendra Kumar; Ahmad, Rafiq; Dubey, Suresh Kumar (Informa UK Limited, 2018-05-23)
      The early detection of Listeria monocytogenes (L. monocytogenes) and understanding the disease burden is of paramount interest. The failure to detect pathogenic bacteria in the food industry may have terrible consequences, and poses deleterious effects on human health. Therefore, integration of methods to detect and trace the route of pathogens along the entire food supply network might facilitate elucidation of the main contamination sources. Recent research interest has been oriented towards the development of rapid and affordable pathogen detection tools/techniques. An innovative and new approach like biosensors has been quite promising in revealing the foodborne pathogens. In spite of the existing knowledge, advanced research is still needed to substantiate the expeditious nature and sensitivity of biosensors for rapid and in situ analysis of foodborne pathogens. This review summarizes recent developments in optical, piezoelectric, cell-based, and electrochemical biosensors for Listeria sp. detection in clinical diagnostics, food analysis, and environmental monitoring, and also lists their drawbacks and advantages.
    • Preparation of a Highly Conductive Seed Layer for Calcium Sensor Fabrication with Enhanced Sensing Performance

      Ahmad, Rafiq; Tripathy, Nirmalya; Ahn, Min-Sang; Yoo, Jin-Young; Hahn, Yoon-Bong (American Chemical Society (ACS), 2018-03-16)
      The seed layer plays a crucial role in achieving high electrical conductivity and ensuring higher performance of devices. In this study, we report fabrication of a solution-gated field-effect transistor (FET) sensor based on zinc oxide nanorods (ZnO NRs) modified iron oxide nanoparticles (α-FeO NPs) grown on a highly conductive sandwich-like seed layer (ZnO seed layer/Ag nanowires/ZnO seed layer). The sandwich-like seed layer and ZnO NRs modification with α-FeO NPs provide excellent conductivity and prevent possible ZnO NRs surface damage from low pH enzyme immobilization, respectively. The highly conductive solution-gated FET sensor employed the calmodulin (CaM) immobilization on the surface of α-FeO-ZnO NRs for selective detection of calcium ions (Ca). The solution-gated FET sensor exhibited a substantial change in conductance upon introduction of different concentrations of Ca and showed high sensitivity (416.8 μA cm mM) and wide linear range (0.01-3.0 mM). In addition, the total Ca concentration in water and serum samples was also measured. Compared to the analytically obtained data, our sensor was found to measure Ca in the water and serum samples accurately, suggesting a potential alternative for Ca determination in water and serum samples, specifically used for drinking/irrigation and clinical analysis.
    • Highly sensitive and selective SO2 MOF sensor: the integration of MFM-300 MOF as a sensitive layer on a capacitive interdigitated electrode

      Chernikova, Valeriya; Yassine, Omar; Shekhah, Osama; Eddaoudi, Mohamed; Salama, Khaled N. (Royal Society of Chemistry (RSC), 2018-03-05)
      We report on the fabrication of an advanced chemical capacitive sensor for the detection of sulfur dioxide (SO2) at room temperature. The sensing layer based on an indium metal–organic framework (MOF), namely MFM-300, is coated solvothermally on a functionalized capacitive interdigitated electrode. The fabricated sensor exhibits significant detection sensitivity to SO2 at concentrations down to 75 ppb, with the lower detection limit estimated to be around 5 ppb. The MFM-300 MOF sensor demonstrates highly desirable detection selectivity towards SO2 vs. CH4, CO2, NO2 and H2, as well as an outstanding SO2 sensing stability.
    • The quest for highly sensitive QCM humidity sensors: the coating of CNT/MOF composite sensing films as case study

      Chappanda, Karumbaiah. N.; Shekhah, Osama; Yassine, Omar; Patole, Shashikant P.; Eddaoudi, Mohamed; Salama, Khaled N. (Elsevier BV, 2017-11-01)
      The application of metal-organic frameworks (MOFs) as a sensing layer has been attracting great interest over the last decade, due to their uniform properties in terms of high porosity and tunability, which provides a large surface area and/or centers for trapping/binding a targeted analyte. Here we report the fabrication of a highly sensitive humidity sensor that is based on composite thin films of HKUST-1 MOF and carbon nanotubes (CNT). The composite sensing films were fabricated by spin coating technique on a quartz-crystal microbalance (QCM) and a comparison of their shift in resonance frequencies to adsorbed water vapor (5 to 75% relative humidity) is presented. Through optimization of the CNT and HKUST-1 composition, we could demonstrate a 230% increase in sensitivity compared to plain HKUST-1 film. The optimized CNT-HKUST-1 composite thin films are stable, reliable, and have an average sensitivity of about 2.5×10−5 (Δf/f) per percent of relative humidity, which is up to ten times better than previously reported QCM-based humidity sensors. The approach presented here is facile and paves a promising path towards enhancing the sensitivity of MOF-based sensors.
    • Bio-Inspired Carbon Monoxide Sensors with Voltage-Activated Sensitivity

      Savagatrup, Suchol; Schroeder, Vera; He, Xin; Lin, Sibo; He, Maggie; Yassine, Omar; Salama, Khaled N.; Zhang, Xixiang; Swager, Timothy M. (Wiley-Blackwell, 2017-09-27)
      Carbon monoxide (CO) outcompetes oxygen when binding to the iron center of hemeproteins, leading to a reduction in blood oxygen level and acute poisoning. Harvesting the strong specific interaction between CO and the iron porphyrin provides a highly selective and customizable sensor. We report the development of chemiresistive sensors with voltage-activated sensitivity for the detection of CO comprising iron porphyrin and functionalized single-walled carbon nanotubes (F-SWCNTs). Modulation of the gate voltage offers a predicted extra dimension for sensing. Specifically, the sensors show a significant increase in sensitivity toward CO when negative gate voltage is applied. The dosimetric sensors are selective to ppm levels of CO and functional in air. UV/Vis spectroscopy, differential pulse voltammetry, and density functional theory reveal that the in situ reduction of FeIII to FeII enhances the interaction between the F-SWCNTs and CO. Our results illustrate a new mode of sensors wherein redox active recognition units are voltage-activated to give enhanced and highly specific responses.
    • H2 S Sensors: Fumarate-Based fcu-MOF Thin Film Grown on a Capacitive Interdigitated Electrode

      Yassine, Omar; Shekhah, Osama; Assen, Ayalew Hussen Assen; Belmabkhout, Youssef; Salama, Khaled N.; Eddaoudi, Mohamed (Wiley-Blackwell, 2016-10-31)
      Herein we report the fabrication of an advanced sensor for the detection of hydrogen sulfide (H2S) at room temperature, using thin films of rare-earth metal (RE)-based metal-organic framework (MOF) with underlying fcu topology. This unique MOF-based sensor is made via the insitu growth of fumarate-based fcu-MOF (fum-fcu-MOF) thin film on a capacitive interdigitated electrode. The sensor showed a remarkable detection sensitivity for H2S at concentrations down to 100ppb, with the lower detection limit around 5ppb. The fum-fcu-MOF sensor exhibits a highly desirable detection selectivity towards H2S vs. CH4, NO2, H2, and C7H8 as well as an outstanding H2S sensing stability as compared to other reported MOFs. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
    • Design and fabrication of capacitive interdigitated electrodes for smart gas sensors

      Omran, Hesham; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2016-09-05)
      In this paper, we study the design parameters of capacitive interdigitated electrodes (IDEs) and the effect of these parameters on the sensitivity of the IDEs when employed as a capacitive gas sensor. Finite element simulations using COMSOL Multiphysics were carried out to evaluate the sensitivity of the capacitive sensor. Simulations show that for permittivity-based sensing, the optimum thickness of the sensing film is slightly more than half the wavelength of the IDEs structure. On the other hand, sensing films that are thinner than half wavelength should be used if the required sensing mechanism is based on structural swelling. Increasing the IDEs metal thickness can increase the sensitivity by increasing the sidewall electric field, but this is only true if the sensing film is thick enough to completely fill the spacing between the electrodes. A simple and reliable IDEs structure and fabrication process are proposed. Physical dry etching provides good yield and fine resolution compared to liftoff technique. Fabricated and packaged prototype sensors are presented. © 2015 IEEE.
    • First line shape analysis and spectroscopic parameters for the ν11 band of 12C2H4

      Es-sebbar, Et-touhami; Mantzaras, John; Benilan, Yves; Farooq, Aamir (Elsevier BV, 2016-08-11)
      An accurate knowledge of line intensities, collisional broadening coefficients and narrowing parameters is necessary for the interpretation of high-resolution infrared spectra of the Earth and other planetary atmospheres. One of the most promising spectral domains for (C2H4)-C-12 monitoring in such environments is located near the 336 gm window, through its v(11) C-H stretching mode. In this paper, we report an extensive study in which we precisely determine spectroscopic parameters of (C2H4)-C-12 v(11) band at 297 +/- 1 K, using a narrow Difference-Frequency-Generation (DFG) laser with 10(-4) cm(-1) resolution. Absorption measurements were performed in the 2975-2980 cm(-1) spectral window to investigate 32 lines corresponding to where, J'ka',kc'<- Jka,kc, 5 <= J <= 7; 0.5 <= K-a <= 6 and 1 <= K-c <= 14. Spectroscopic parameters are retrieved using either Voigt or appropriate Galatry profile to simulate the measured (C2H4)-C-12 line shape. Line intensities along with self-broadening coefficients are reported for all lines. Narrowing coefficients for each isolated line are also derived. To our knowledge, the current study reports the first extensive spectroscopic parameter measurements of the (C2H4)-C-12 v(11) band in the 2975-2980 cm(-1) range. (C) 2016 Elsevier Ltd. All rights reserved.
    • Wavy Channel TFT-Based Digital Circuits

      Hanna, Amir; Hussain, Aftab M.; Hussain, Aftab M.; Hussain, Aftab M.; Omran, Hesham; Alsharif, Sarah M.; Salama, Khaled N.; Hussain, Muhammad Mustafa (Institute of Electrical and Electronics Engineers (IEEE), 2016-02-23)
      We report a wavy channel (WC) architecture thin-film transistor-based digital circuitry using ZnO as a channel material. The novel architecture allows for extending device width by integrating vertical finlike substrate corrugations giving rise to 50% larger device width, without occupying extra chip area. The enhancement in the output drive current is 100%, when compared with conventional planar architecture for devices occupying the same chip area. The current increase is attributed to both the extra device width and 50% enhancement in field-effect mobility due to electrostatic gating effects. Fabricated inverters show that WC inverters can achieve two times the peak-to-peak output voltage for the same input when compared with planar devices. In addition, WC inverters show 30% faster rise and fall times, and can operate up to around two times frequency of the planar inverters for the same peak-to-peak output voltage. WC NOR circuits have shown 70% higher peak-to-peak output voltage, over their planar counterparts, and WC pass transistor logic multiplexer circuit has shown more than five times faster high-to-low propagation delay compared with its planar counterpart at a similar peak-to-peak output voltage.
    • Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

      Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa (Institute of Electrical and Electronics Engineers (IEEE), 2015-12-04)
      High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.
    • Flexible low-cost cardiovascular risk marker biosensor for point-of-care applications

      Sivashankar, Shilpa; Sapsanis, Christos; Buttner, Ulrich; Salama, Khaled N. (Institution of Engineering and Technology (IET), 2015-10-22)
      The detection and quantification of protein on a laser written flexible substrate for point-of-care applications are described. A unique way of etching gold on polyethylene terephthalate (PET) substrate is demonstrated by reducing the damage that may be caused on PET sheets otherwise. On the basis of the quantity of the C-reactive protein (CRP) present in the sample, the risk of cardiac disease can be assessed. This hsCRP test is incorporated to detect the presence of CRP on a PET laser patterned biosensor. Concentrations of 1, 2, and 10 mg/l were chosen to assess the risk of cardiac diseases as per the limits set by the American Heart Association.
    • Capacitive immunosensor for C-reactive protein quantification

      Sapsanis, Christos; Sivashankar, Shilpa; Omran, Hesham; Buttner, Ulrich; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2015-08-02)
      We report an agglutination-based immunosensor for the quantification of C-reactive protein (CRP). The developed immunoassay sensor requires approximately 15 minutes of assay time per sample and provides a sensitivity of 0.5 mg/L. We have measured the capacitance of interdigitated electrodes (IDEs) and quantified the concentration of added analyte. The proposed method is a label free detection method and hence provides rapid measurement preferable in diagnostics. We have so far been able to quantify the concentration to as low as 0.5 mg/L and as high as 10 mg/L. By quantifying CRP in serum, we can assess whether patients are prone to cardiac diseases and monitor the risk associated with such diseases. The sensor is a simple low cost structure and it can be a promising device for rapid and sensitive detection of disease markers at the point-of-care stage.
    • Insights on Capacitive Interdigitated Electrodes Coated with MOF Thin Films: Humidity and VOCs Sensing as a Case Study

      Sapsanis, Christos; Omran, Hesham; Chernikova, Valeriya; Shekhah, Osama; Belmabkhout, Youssef; Buttner, Ulrich; Eddaoudi, Mohamed; Salama, Khaled N. (MDPI AG, 2015-07-24)
      A prototypical metal-organic framework (MOF), a 2D periodic porous structure based on the assembly of copper ions and benzene dicarboxylate (bdc) ligands (Cu(bdc)·xH2O), was grown successfully as a thin film on interdigitated electrodes (IDEs). IDEs have been used for achieving planar CMOS-compatible low-cost capacitive sensing structures for the detection of humidity and volatile organic compounds (VOCs). Accordingly, the resultant IDEs coated with the Cu(bdc)·xH2O thin film was evaluated, for the first time, as a capacitive sensor for gas sensing applications. A fully automated setup, using LabVIEW interfaces to experiment conduction and data acquisition, was developed in order to measure the associated gas sensing performance.
    • Memristors Empower Spiking Neurons With Stochasticity

      Al-Shedivat, Maruan; Naous, Rawan; Cauwenberghs, Gert; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2015-06)
      Recent theoretical studies have shown that probabilistic spiking can be interpreted as learning and inference in cortical microcircuits. This interpretation creates new opportunities for building neuromorphic systems driven by probabilistic learning algorithms. However, such systems must have two crucial features: 1) the neurons should follow a specific behavioral model, and 2) stochastic spiking should be implemented efficiently for it to be scalable. This paper proposes a memristor-based stochastically spiking neuron that fulfills these requirements. First, the analytical model of the memristor is enhanced so it can capture the behavioral stochasticity consistent with experimentally observed phenomena. The switching behavior of the memristor model is demonstrated to be akin to the firing of the stochastic spike response neuron model, the primary building block for probabilistic algorithms in spiking neural networks. Furthermore, the paper proposes a neural soma circuit that utilizes the intrinsic nondeterminism of memristive switching for efficient spike generation. The simulations and analysis of the behavior of a single stochastic neuron and a winner-take-all network built of such neurons and trained on handwritten digits confirm that the circuit can be used for building probabilistic sampling and pattern adaptation machinery in spiking networks. The findings constitute an important step towards scalable and efficient probabilistic neuromorphic platforms. © 2011 IEEE.
    • Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

      Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jürgen; Salama, Khaled N.; Hussain, Muhammad Mustafa (Wiley-Blackwell, 2015-04-24)
      A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate's thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.
    • Inherently stochastic spiking neurons for probabilistic neural computation

      Al-Shedivat, Maruan; Naous, Rawan; Neftci, Emre; Cauwenberghs, Gert; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2015-04)
      Neuromorphic engineering aims to design hardware that efficiently mimics neural circuitry and provides the means for emulating and studying neural systems. In this paper, we propose a new memristor-based neuron circuit that uniquely complements the scope of neuron implementations and follows the stochastic spike response model (SRM), which plays a cornerstone role in spike-based probabilistic algorithms. We demonstrate that the switching of the memristor is akin to the stochastic firing of the SRM. Our analysis and simulations show that the proposed neuron circuit satisfies a neural computability condition that enables probabilistic neural sampling and spike-based Bayesian learning and inference. Our findings constitute an important step towards memristive, scalable and efficient stochastic neuromorphic platforms. © 2015 IEEE.
    • A low-power 802.11 AD compatible 60-GHz phase-locked loop in 65-NM CMOS

      Cheema, Hammad M.; Arsalan, Muhammad; Salama, Khaled N.; Shamim, Atif (Wiley-Blackwell, 2015-01-23)
      A 60-GHz fundamental frequency phase locked loop (PLL) as part of a highly integrated system-on-chip transmitter with onchip memory and antenna is presented. As a result of localized optimization approach for each component, the PLL core components only consume 30.2 mW from a 1.2 V supply. A systematic design procedure to achieve high phase margin and wide locking range is presented. The reduction of parasitic and fixed capacitance contributions in the voltage controlled oscillator enables the coverage of the complete 802.11 ad frequency band from 57.2 to 65.8 GHz. A new 4-stage distribution network supplying the local oscillator (LO) signal to the mixer, the feedback loop and the external equipment is introduced. The prescaler based on the static frequency division approach is enhanced using shunt-peaking and asymmetric capacitive loading. The current mode logic based divider chain is optimized for low power and minimum silicon foot-print. A dead-zone free phase frequency detector, low leakage charge pump, and an integrated second-order passive filter completes the feedback loop. The PLL implemented in 65 nm CMOS process occupies only 0.6 mm2 of chip space and has a measured locking range from 56.8 to 66.5 GHz. The reference spurs are lower than -40 dBc and the in-band and out-of-band phase noise is -88.12 dBc/Hz and -117 dBc/Hz, respectively.
    • Compensated readout for high-density MOS-gated memristor crossbar array

      Zidan, Mohammed A.; Omran, Hesham; Salem, Ahmed Sultan; Fahmy, Hossam Aly Hassan; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2015-01)
      Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
    • An interference cancellation strategy for broadcast in hierarchical cell structure

      Yang, Yuli; Aïssa, Sonia; Eltawil, Ahmed M.; Salama, Khaled N. (Institute of Electrical and Electronics Engineers (IEEE), 2014-12)
      In this paper, a hierarchical cell structure is considered, where public safety broadcasting is fulfilled in a femtocell located within a macrocell. In the femtocell, also known as local cell, an access point broadcasts to each local node (LN) over an orthogonal frequency sub-band independently. Since the local cell shares the spectrum licensed to the macrocell, a given LN is interfered by transmissions of the macrocell user (MU) in the same sub-band. To improve the broadcast performance in the local cell, a novel scheme is proposed to mitigate the interference from the MU to the LN while achieving diversity gain. For the sake of performance evaluation, ergodic capacity of the proposed scheme is quantified and a corresponding closed-form expression is obtained. By comparing with the traditional scheme that suffers from the MU's interference, numerical results substantiate the advantage of the proposed scheme and provide a useful tool for the broadcast design in hierarchical cell systems.