Recent Submissions

  • Flexible InGaN nanowire membranes for enhanced solar water splitting

    Elafandy, Rami T.; Elafandy, Rami T.; Min, Jung-Wook; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S. (Optics Express, The Optical Society, 2018-05-30) [Article]
    III-Nitride nanowires (NWs) have recently emerged as potential photoelectrodes for efficient solar hydrogen generation. While InGaN NWs epitaxy over silicon is required for high crystalline quality and economic production, it leads to the formation of the notorious silicon nitride insulating interface as well as low electrical conductivity which both impede excess charge carrier dynamics and overall device performance. We tackle this issue by developing, for the first time, a substrate-free InGaN NWs membrane photoanodes, through liftoff and transfer techniques, where excess charge carriers are efficiently extracted from the InGaN NWs through a proper ohmic contact formed with a high electrical conductivity metal stack membrane. As a result, compared to conventional InGaN NWs on silicon, the fabricated free-standing flexible membranes showed a 10-fold increase in the generated photocurrent as well as a 0.8 V cathodic shift in the onset potential. Through electrochemical impedance spectroscopy, accompanied with TEM-based analysis, we further demonstrated the detailed enhancement within excess charge carrier dynamics of the photoanode membranes. This novel configuration in photoelectrodes demonstrates a novel pathway for enhancing the performance of III-nitrides photoelectrodes to accelerate their commercialization for solar water splitting.
  • Quantified Hole Concentration in AlGaN Nanowires for High-Performance Ultraviolet Emitters

    Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S. (Nanoscale, Royal Society of Chemistry (RSC), 2018-05-29) [Article]
    P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
  • Contact Resistance Reduction of ZnO Thin Film Transistors (TFTs) with Saw-Shaped Electrode

    Park, Woojin; Shaikh, Sohail F.; Min, Jungwook; Lee, Sang Kyung; Lee, Byoung Hun; Hussain, Muhammad Mustafa (Nanotechnology, IOP Publishing, 2018-05-15) [Article]
    We report a saw-shaped electrode architecture ZnO thin film transistor (TFT) for effectively increase channel width. Such a saw-shaped electrode has ~2 times longer contact line at the contact metal/ZnO channel junction. We experimentally observed an enhancement in the output drive current by 50% and reduction in the contact resistance by over 50%, when compared to a typical shaped electrode ZnO TFT consuming the same chip area. This performance enhancement is attributed to extension of channel width. This technique can contribute to device performance enhancement and especially reduction in the contact resistance which is a serious challenge.
  • Ti/TaN Bilayer for Efficient Injection and Reliable AlGaN Nanowires LEDs

    Priante, Davide; Janjua, Bilal; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T.; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S. (Conference on Lasers and Electro-Optics, The Optical Society, 2018-05-07) [Conference Paper]
    Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.
  • 375-nm ultraviolet-laser based non-line-of-sight underwater optical communication

    Sun, Xiaobin; Cai, Wenqi; Alkhazragi, Omar; Ooi, Ee-Ning; He, Hongsen; Chaaban, Anas; Shen, Chao; Oubei, Hassan M.; Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Alouini, Mohamed-Slim; Ooi, Boon S. (Optics Express, The Optical Society, 2018-05-04) [Article]
    For circumventing the alignment requirement of line-of-sight (LOS) underwater wireless optical communication (UWOC), we demonstrated a non-line-of-sight (NLOS) UWOC link adequately enhanced using ultraviolet (UV) 375-nm laser. Path loss was chosen as a figure-of-merit for link performance in this investigation, which considers the effects of geometries, water turbidity, and transmission wavelength. The experiments suggest that path loss decreases with smaller azimuth angles, higher water turbidity, and shorter wavelength due in part to enhanced scattering utilizing 375-nm radiation. We highlighted that it is feasible to extend the current findings for long distance NLOS UWOC link in turbid water, such as harbor water.
  • Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    Lin, Ronghui; Galan, Sergio Valdes; Sun, Haiding; Hu, Yangrui; Alias, Mohd Sharizal; Janjua, Bilal; Ng, Tien Khee; Ooi, Boon S.; Li, Xiaohang (Photonics Research, The Optical Society, 2018-04-21) [Article]
    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.
  • Visible light communication using DC-biased optical filter bank multi-carrier modulation

    Chen, Rui; Park, Kihong; Shen, Chao; Ng, Tien Khee; Ooi, Boon S.; Alouini, Mohamed-Slim (2018 Global LIFI Congress (GLC), Institute of Electrical and Electronics Engineers (IEEE), 2018-03-19) [Conference Paper]
    Filter bank multicarrier (FBMC) has become a promising candidate to replace conventional orthogonal frequency-division multiplexing (OFDM) scheme in 5G technology due to its better spectral confinement which results in a reduced inter-channel interference (ICI). However, the viability of using FBMC in visible light communication has not been verified. In this work we present the first experimental validation of the DC-biased optical filter bank multicarrier (DCO-FBMC) modulation scheme over a free-space optical channel. Under different receiving powers, up to three times bit error rate performance improvement has been achieved using DCO-FBMC with different overlapping factors compared to that of conventional DCO-OFDM.
  • Ultraviolet-A LED Based on Quantum-disks-in-AlGaN-nanowires - Optimization and Device Reliability

    Janjua, Bilal; Priante, Davide; Prabaswara, Aditya; Alanazi, Lafi M.; Zhao, Chao; Alhamoud, Abdullah; Alias, Mohd Sharizal; Rahman, Abdul; Alyamani, Ahmed; Ng, Tien Khee; Ooi, Boon S. (IEEE Photonics Journal, Institute of Electrical and Electronics Engineers (IEEE), 2018-03-16) [Article]
    Group-III nitride-based ultraviolet (UV) quantum-disks (Qdisks) nanowires (NWs) light-emitting diodes grown on silicon substrates offer a scalable, environment-friendly, compact, and low-cost solution for numerous applications such as solid-state lighting, spectroscopy, and biomedical. However, the internal quantum efficiency, injection efficiency, and extraction efficiency need to be further improved. The focus of this paper encompasses investigations based on structural optimization, device simulation, and device reliability. To optimize a UV-A (320-400 nm) device structure we utilize the self-assembled quantum-disk-NWs with varying quantum-disks thickness to study carrier separation in active-region and implement an improved p-contact-layer to increase output power. By simulation, we found a 100° improvement in the direct recombination rate for samples with thicker Qdisks thickness of 1.2 nm compared to the sample with 0.6 nm-thick Qdisks. Moreover, the sample with graded top Mg-doped AlGaN layer in conjunction with thin Mg-doped GaN layer shows 10° improvement in the output power compared to the samples with thicker top Mg-doped GaN absorbing contact layer. A fitting with ABC model revealed the increase in non-radiative recombination centers in the active region after a soft stress-test. This work aims to shed light on the research efforts required for furthering the UV NWs LED research for practical applications.
  • Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

    Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S. (Journal of Applied Physics, AIP Publishing, 2018-03-09) [Article]
    We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.
  • Water Splitting over Epitaxially Grown InGaN Nanowires on-Metallic Titanium/Silicon Template: Reduced Interfacial Transfer Resistance and Improved Stability

    Ebaid, Mohamed; Min, Jungwook; Zhao, Chao; Ng, Tien Khee; Idriss, Hicham; Ooi, Boon S. (Journal of Materials Chemistry A, Royal Society of Chemistry (RSC), 2018-03-09) [Article]
    Water splitting using InGaN-based photocatalysts may have a great contribution in future renewable energy production systems. Among the most important parameters to solve are those related to substrate lattice-matching compatibility. Here, we directly grow InGaN nanowires (NWs) on a metallic Ti/Si template, for improving water splitting performance compared to a bare Si substrate. The open circuit potential of the epitaxially grown InGaN NWs on metallic Ti was almost two times that of those grown on Si substrate. The interfacial transfer resistance was also reduced significantly after introducing the metallic Ti interlayer. An applied-bias-photon-to-current conversion efficiency of 2.2% and almost unity Faradic efficiency for hydrogen generation were achieved using this approach. The InGaN NWs grown on Ti showed improved stability of hydrogen generation under continuous operation conditions, when compared to those grown on Si, emphasizing the role of the semiconductor-on-metal approach in enhancing the overall efficiency of water splitting catalysts.
  • Free-space optical channel characterization and experimental validation in a coastal environment

    Alheadary, Wael; Park, Kihong; Alfaraj, Nasir; Guo, Yujian; Stegenburgs, Edgars; Ng, Tien Khee; Ooi, Boon S.; Alouini, Mohamed-Slim (Optics Express, The Optical Society, 2018-03-05) [Article]
    Over the years, free-space optical (FSO) communication has attracted considerable research interest owing to its high transmission rates via the unbounded and unlicensed bandwidths. Nevertheless, various weather conditions lead to significant deterioration of the FSO link capabilities. In this context, we report on the modelling of the channel attenuation coefficient (β) for a coastal environment and related ambient, considering the effect of coastal air temperature (T), relative humidity (RH) and dew point (TD) by employing a mobile FSO communication system capable of achieving a transmission rate of 1 Gbps at an outdoor distance of 70 m for optical beam wavelengths of 1310 nm and 1550 nm. For further validation of the proposed models, an indoor measurement over a 1.5 m distance utilizing 1310 nm, 1550 nm, and 1064 nm lasers was also performed. The first model provides a general link between T and β, while the second model provides a relation between β, RH as well as TD. By validating our attenuation coefficient model with actual outdoor and indoor experiments, we obtained a scaling parameter x and decaying parameter c values of 19.94, 40.02, 45.82 and 0.03015, 0.04096, 0.0428 for wavelengths of 1550, 1310, 1064 nm, respectively. The proposed models are well validated over the large variation of temperature and humidity over the FSO link in a coastal region and emulated indoor environment.
  • Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

    Lee, Changmin; Shen, Chao; Farrell, Robert M.; Nakamura, Shuji; Ooi, Boon S.; Bowers, John E.; DenBaars, Steven P.; Speck, James S.; Cozzan, Clayton; Alyamani, Ahmed Y. (Gallium Nitride Materials and Devices XIII, SPIE-Intl Soc Optical Eng, 2018-02-23) [Conference Paper]
    We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10-16 cm2, which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.
  • Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications

    Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S. (Optics Express, The Optical Society, 2018-02-14) [Article]
    GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.
  • Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

    Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S. (Nanoscale Research Letters, Springer Nature, 2018-02-06) [Article]
    Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.
  • Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging

    Kusch, Gunnar; Conroy, Michele; Li, Haoning; Edwards, Paul R.; Zhao, Chao; Ooi, Boon S.; Pugh, Jon; Cryan, Martin J.; Parbrook, Peter J.; Martin, Robert W. (Scientific Reports, Springer Nature, 2018-01-23) [Article]
    Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from the blue to the red, were analysed by a combination of electron microscope based imaging techniques. Utilizing the capability of cathodoluminescence hyperspectral imaging it was possible to investigate spatial variations in the luminescence properties on a nanoscale. The high optical quality of a single GaN nanorod was demonstrated, evidenced by a narrow band-edge peak and the absence of any luminescence associated with the yellow defect band. Additionally two spatially confined broad luminescence bands were observed, consisting of multiple peaks ranging from 395 nm to 480 nm and 490 nm to 650 nm. The lower energy band originates from broad c-plane QWs located at the apex of the nanorod and the higher energy band from the semipolar QWs on the pyramidal nanorod tip. Comparing the experimentally observed peak positions with peak positions obtained from plane wave modelling and 3D finite difference time domain(FDTD) modelling shows modulation of the nanorod luminescence by cavity modes. By studying the influence of these modes we demonstrate that this can be exploited as an additional parameter in engineering the emission profile of LEDs.
  • Imaging Localized Energy States in Silicon-doped InGaN Nanowires Using 4D Electron Microscopy

    Bose, Riya; Adhikari, Aniruddha; Burlakov, Victor M; Liu, Guangyu; Haque, Mohammed; Priante, Davide; Hedhili, Mohamed N.; Wehbe, Nimer; Zhao, Chao; Yang, Haoze; Ng, Tien Khee; Goriely, Alain; Bakr, Osman; Wu, Tao; Ooi, Boon S.; Mohammed, Omar F. (ACS Energy Letters, American Chemical Society (ACS), 2018-01-23) [Article]
    Introducing dopants into InGaN NWs is known to significantly improve their device performances through a variety of mechanisms. However, to further optimize device operation under the influence of large specific surfaces, a thorough knowledge of ultrafast dynamical processes at the surface and interface of these NWs is imperative. Here, we describe the development of four-dimensional scanning ultrafast electron microscopy (4D S-UEM) as an extremely surface-sensitive method to directly visualize in space and time the enormous impact of silicon doping on the surface-carrier dynamics of InGaN NWs. Two time regime dynamics are identified for the first time in a 4D S-UEM experiment: an early time behavior (within 200 picoseconds) associated with the deferred evolution of secondary electrons due to the presence of localized trap states that decrease the electron escape rate and a longer timescale behavior (several ns) marked by accelerated charge carrier recombination. The results are further corroborated by conductivity studies carried out in dark and under illumination.
  • Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

    Sun, Haiding; Shakfa, Mohammad Khaled; Mumthaz Muhammed, Mufasila; Janjua, Bilal; Li, Kuang-Hui; Lin, Ronghui; Ng, Tien Khee; Roqan, Iman S.; Ooi, Boon S.; Li, Xiaohang (ACS Photonics, American Chemical Society (ACS), 2017-12-19) [Article]
    Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.
  • Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Ooi, Boon S. (2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), Institute of Electrical and Electronics Engineers (IEEE), 2017-11-30) [Conference Paper]
    The challenges to realizing III-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.
  • Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

    Priante, Davide; Janjua, Bilal; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T.; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao; Ng, Tien Khee; Ooi, Boon S. (Optical Materials Express, The Optical Society, 2017-11-02) [Article]
    In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.
  • Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

    Tangi, Malleswararao; Shakfa, Mohammad Khaled; Mishra, Pawan; Li, Ming-yang; Chiu, Ming-Hui; Ng, Tien Khee; Li, Lain-Jong; Ooi, Boon S. (Optical Materials Express, The Optical Society, 2017-09-22) [Article]
    We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.

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