Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing
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Chao Shen et al OE 23-7991.pdf
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ArticleAuthors
Shen, Chao
Ng, Tien Khee

Ooi, Boon S.

KAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Photonics Laboratory
Date
2015-03-19Online Publication Date
2015-03-19Print Publication Date
2015-03-23Permanent link to this record
http://hdl.handle.net/10754/558584
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We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.Citation
Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing 2015, 23 (6):7991 Optics ExpressPublisher
The Optical SocietyJournal
Optics ExpressAdditional Links
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-6-7991ae974a485f413a2113503eed53cd6c53
10.1364/OE.23.007991