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    Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

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    Name:
    Chao Shen et al OE 23-7991.pdf
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    PDF
    Description:
    Accepted Manuscript
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    Type
    Article
    Authors
    Shen, Chao cc
    Ng, Tien Khee cc
    Ooi, Boon S. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Photonics Laboratory
    Date
    2015-03-19
    Online Publication Date
    2015-03-19
    Print Publication Date
    2015-03-23
    Permanent link to this record
    http://hdl.handle.net/10754/558584
    
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    Abstract
    We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.
    Citation
    Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing 2015, 23 (6):7991 Optics Express
    Publisher
    The Optical Society
    Journal
    Optics Express
    DOI
    10.1364/OE.23.007991
    Additional Links
    https://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-6-7991
    ae974a485f413a2113503eed53cd6c53
    10.1364/OE.23.007991
    Scopus Count
    Collections
    Articles; Electrical and Computer Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division

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