Alatawi, Abdullah; Holguin Lerma, Jorge Alberto; Kang, Chun Hong; Shen, Chao; Subedi, Ram Chandra; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.(Optics Express, The Optical Society, 2018-09-25)[Article]
We demonstrated a high-power (474 mW) blue superluminescent diode (SLD) on c-plane GaN-substrate for speckle-free solid-state lighting (SSL), and high-speed visible light communication (VLC) link. The device, emitting at 442 nm, showed a large spectral bandwidth of 6.5 nm at an optical power of 105 mW. By integrating a YAG-phosphor-plate to the SLD, a CRI of 85.1 and CCT of 3392 K were measured, thus suitable for solid-state lighting. The SLD shows a relatively large 3-dB modulation bandwidth of >400 MHz, while a record high data rate of 1.45 Gigabit-per-second (Gbps) link has been achieved below forward-error correction (FEC) limit under non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. Our results suggest that SLD is a promising alternative for simultaneous speckle-free white lighting and Gbps data communication dual functionalities.
Shen, Chao; Ng, Tien Khee; Lee, Changmin; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.(Optics Express, The Optical Society, 2018-02-14)[Article]
GaN-based semiconductor optical amplifier (SOA) and its integration with laser diode (LD) is an essential building block yet to be demonstrated for III-nitride photonic integrated circuits (PICs) at visible wavelength. This paper presents the InGaN/GaN quantum well (QW) based dual-section LD consisting of integrated amplifier and laser gain regions fabricated on a semipolar GaN substrate. The threshold current in the laser gain region was favorably reduced from 229mA to 135mA at SOA driving voltages, VSOA, of 0V and 6.25V, respectively. The amplification effect was measured based on a large gain of 5.7 dB at VSOA = 6.25V from the increased optical output power of 8.2 mW to 30.5 mW. Such integrated amplifier can be modulated to achieve Gbps data communication using on-off keying technique. The monolithically integrated amplifier-LD paves the way towards the III-nitride on-chip photonic system, providing a compact, low-cost, and multi-functional solution for applications such as smart lighting and visible light communications.
Sun, Xiaobin; Cai, Wenqi; Alkhazragi, Omar; Ooi, Ee-Ning; He, Hongsen; Chaaban, Anas; Shen, Chao; Oubei, Hassan M.; Khan, Mohammed Zahed Mustafa; Ng, Tien Khee; Alouini, Mohamed-Slim; Ooi, Boon S.(Optics Express, The Optical Society, 2018-05-04)[Article]
For circumventing the alignment requirement of line-of-sight (LOS) underwater wireless optical communication (UWOC), we demonstrated a non-line-of-sight (NLOS) UWOC link adequately enhanced using ultraviolet (UV) 375-nm laser. Path loss was chosen as a figure-of-merit for link performance in this investigation, which considers the effects of geometries, water turbidity, and transmission wavelength. The experiments suggest that path loss decreases with smaller azimuth angles, higher water turbidity, and shorter wavelength due in part to enhanced scattering utilizing 375-nm radiation. We highlighted that it is feasible to extend the current findings for long distance NLOS UWOC link in turbid water, such as harbor water.
This paper presents the first demonstration of InGaN multiple quantum well (MQW) based micro-photodetectors (µPD) used as the optical receiver in orthogonal frequency-division multiplexing (OFDM) modulated visible communication system (VLC). The 80-µm diameter µPD exhibits a wavelength-selective responsivity in the near-UV to violet regime (374 nm - 408 nm) under a low reverse bias of −3 V. The modulation scheme of 16-quadrature amplitude modulation (16-QAM) OFDM enables the use of frequency response beyond −3 dB cutoff bandwidth of µPD. A record high data rate of 3.2 Gigabit per second (Gpbs) was achieved as a result, which provides the proof-of-concept verification of a viable high speed VLC link.
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