Lin, Ronghui; Galan, Sergio Valdes; Sun, Haiding; Hu, Yangrui; Alias, Mohd Sharizal; Janjua, Bilal; Ng, Tien Khee; Ooi, Boon S.; Li, Xiaohang(Photonics Research, The Optical Society, 2018-04-21)[Article]
A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.
Tangi, Malleswararao; Mishra, Pawan; Tseng, Chien-Chih; Ng, Tien Khee; Hedhili, Mohamed N.; Anjum, Dalaver H.; Alias, Mohd Sharizal; Wei, Nini; Li, Lain-Jong; Ooi, Boon S.(ACS Applied Materials & Interfaces, American Chemical Society (ACS), 2017-02-21)[Article]
We study the band discontinuity at the GaN/single-layer (SL) WSe2 heterointerface. The GaN thin layer is epitaxially grown by molecular beam epitaxy on chemically vapor deposited SL-WSe2/c-sapphire. We confirm that the WSe2 was formed as an SL from structural and optical analyses using atomic force microscopy, scanning transmission electron microscopy, micro-Raman, absorbance, and microphotoluminescence spectra. The determination of band offset parameters at the GaN/SL-WSe2 heterojunction is obtained by high-resolution X-ray photoelectron spectroscopy, electron affinities, and the electronic bandgap values of SL-WSe2 and GaN. The valence band and conduction band offset values are determined to be 2.25 ± 0.15 and 0.80 ± 0.15 eV, respectively, with type II band alignment. The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
Alias, Mohd Sharizal; Liu, Zhixiong; Alatawi, Abdullah; Ng, Tien Khee; Wu, Tao; Ooi, Boon S.(Conference on Lasers and Electro-Optics, OSA, 2017-05-08)[Conference Paper]
We demonstrate the lasing of a perovskite vertical-cavity surface-emitting laser at green wavelengths, which operates under continuous-wave optical pumping at room-temperature by embedding hybrid perovskite between dielectric mirrors deposited at low-temperature.
Alheadary, Wael Ghazy; Park, Kihong; Alfaraj, Nasir; Guo, Yujian; Stegenburgs, Edgars; Ng, Tien Khee; Ooi, Boon S.; Alouini, Mohamed-Slim(Optics Express, The Optical Society, 2018-03-05)[Article]
Over the years, free-space optical (FSO) communication has attracted considerable research interest owing to its high transmission rates via the unbounded and unlicensed bandwidths. Nevertheless, various weather conditions lead to significant deterioration of the FSO link capabilities. In this context, we report on the modelling of the channel attenuation coefficient (β) for a coastal environment and related ambient, considering the effect of coastal air temperature (T), relative humidity (RH) and dew point (TD) by employing a mobile FSO communication system capable of achieving a transmission rate of 1 Gbps at an outdoor distance of 70 m for optical beam wavelengths of 1310 nm and 1550 nm. For further validation of the proposed models, an indoor measurement over a 1.5 m distance utilizing 1310 nm, 1550 nm, and 1064 nm lasers was also performed. The first model provides a general link between T and β, while the second model provides a relation between β, RH as well as TD. By validating our attenuation coefficient model with actual outdoor and indoor experiments, we obtained a scaling parameter x and decaying parameter c values of 19.94, 40.02, 45.82 and 0.03015, 0.04096, 0.0428 for wavelengths of 1550, 1310, 1064 nm, respectively. The proposed models are well validated over the large variation of temperature and humidity over the FSO link in a coastal region and emulated indoor environment.
Lee, It Ee; Guo, Yujian; Ng, Tien Khee; Park, Kihong; Alouini, Mohamed-Slim; Ooi, Boon S.(2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), IEEE, 2017-11-30)[Conference Paper]
Underwater wireless optical communication (UWOC) has been widely studied as a promising alternative to establish reliable short-range marine communication links. Microscopic particulates suspended in various ocean, harbor and natural waters will alter the propagation characteristics of the optical signals underwater. In this paper, we demonstrate a gigabit near-infrared (NIR)-based UWOC link using an 808-nm laser diode, to examine the feasibility of the proposed system in mitigating the particle scattering effect over turbid waters. We show that the NIR wavelengths presents greater resilience to the aqueous suspension of these micro-sized particles with a smaller scattering effect due to its longer wavelength, as evident by the smaller variations in the optical beam transmittance. It is also observed that the error performance is improved at higher concentrations albeit the significant reduction in received signal power. We further demonstrate that the overall frequency response of the system exhibits a bandwidth enhancement up to a few tens of MHz with increasing concentrations.
Zhao, Chao; Ebaid, Mohamed; Zhang, Huafan; Priante, Davide; Janjua, Bilal; Zhang, Daliang; Wei, Nini; Alhamoud, Abdullah; Shakfa, M. Khaled; Ng, Tien Khee; Ooi, Boon S.(Nanoscale, Royal Society of Chemistry (RSC), 2018-05-29)[Article]
P-type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity; while Mott-Schottky experiments measured a hole concentration of 1.3×1019 cm-3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and optimized p-type AlGaN contact layer for UV-transparency. The ~335-nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.
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