Zidan, Mohammed A.; Eltawil, Ahmed M.; Fahmy, Hossam A.H.; Kurdahi, Fadi; Salama, Khaled N.(IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers (IEEE), 2014-01-31)[Article]
In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied.
Zidan, Mohammed A.; Fahmy, Hossam A.H.; Hussain, Muhammad Mustafa; Salama, Khaled N.(Microelectronics Journal, Elsevier BV, 2012-10-26)[Article]
In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device.
Talukdar, Abdul Hafiz Ibne; Radwan, Ahmed G.; Salama, Khaled N.(Applied Nanoscience, Springer Nature, 2011-08-25)[Article]
This paper demonstrates the first third-order autonomous linear time variant circuit realization that enhances parametric oscillation through the usage of memristor in conventional oscillators. Although the output has sustained oscillation, the linear features of the conventional oscillators become time dependent. The poles oscillate in nonlinear behavior due to the oscillation of memristor resistance. The mathematical formulas as well as SPICE simulations are introduced for the memristor-based phase shift oscillator showing a great matching.
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