The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.
Li, Bodong; Kavaldzhiev, Mincho; Kosel, Jürgen(Journal of Magnetism and Magnetic Materials, Elsevier BV, 2015-03)[Article]
Flexible magnetoimpedance (MI) sensors fabricated using a NiFe/Cu/NiFe tri-layer on Kapton substrate have been studied. A customized flexible microstrip transmission line was employed to investigate the MI sensors's magnetic field and frequency responses and their dependence on the sensors's deflection. For the first time, the impedance characteristic is obtained through reflection coefficient analysis over a wide range of frequencies from 0.1 MHz to 3 GHz and for deflections ranging from zero curvature to a radius of 7.2 cm. The sensor element maintains a high MI ratio of up to 90% and magnetic sensitivity of up to 9.2%/Oe over different bending curvatures. The relationship between the curvature and material composition is discussed based on the magnetostriction effect and stress simulations. The sensor's large frequency range, simple fabrication process and high sensitivity provide a great potential for flexible electronics and wireless applications.
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