The refractive indices of BAlN and BGaN ternary alloys are being investigated using first-principle calculation. The hybrid density functional theory is applied to determine the refractive indices of different alloys. A peculiar bowing effect in the static refractive indices and crossovers of different refractive index curves are found. We speculate that the explanation to these phenomena lies in the interband transitions of electrons where each band bows at a different rate from the other. An average of these bowing effects may result in the bowing of refractive indices.
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
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